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SIR470DP-T1-GE3

SIR470DP-T1-GE3
Mfr. #:
SIR470DP-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 40V 60A PPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR470DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIR470DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SIR814DP-T1-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAKR SO-8
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR SO-8
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
104W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
40V
इनपुट-Capacitance-Ciss-Vds
5660pF @ 20V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
60A (Tc)
Rds-on-max-Id-Vgs
2.3 mOhm @ 20A, 10V
Vgs-th-max-Id
2.5V @ 250μA
गेट-चार्ज-Qg-Vgs
155nC @ 10V
Pd-शक्ति-डिसिपेशन
6.25 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
39 ns
उदय-समय
31 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
60 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
40 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
2.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
2.2 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
85 ns
सामान्य-टर्न-अन-डिले-समय
40 ns
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
190 S
च्यानल-मोड
वृद्धि
Tags
SIR470DP-T1-G, SIR470DP-T, SIR470, SIR47, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
***nell
N CHANNEL MOSFET, 40V, 60A, SOIC, FULL R
***ical
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
N CHANNEL MOSFET, 40V, 60A, SOIC; Transi; N CHANNEL MOSFET, 40V, 60A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V; No. of Pins:8
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
भाग # Mfg। विवरण स्टक मूल्य
SIR470DP-T1-GE3
DISTI # V72:2272_09215740		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3061
  • 3000:$0.9248
  • 1000:$1.0275
  • 500:$1.1417
  • 250:$1.2685
  • 100:$1.4095
  • 25:$1.5432
  • 10:$1.7148
  • 1:$1.9734
SIR470DP-T1-GE3
DISTI # V36:1790_09215740		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3000
  • 3000:$1.1663
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7200In Stock
  • 1000:$1.4950
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7200In Stock
  • 1000:$1.4950
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$1.3514
SIR470DP-T1-GE3
DISTI # 25789916		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3061
  • 3000:$0.9248
  • 1000:$1.0275
  • 500:$1.1417
  • 250:$1.2685
  • 100:$1.4095
  • 25:$1.5432
  • 10:$1.7148
  • 9:$1.9734
SIR470DP-T1-GE3
DISTI # 26960935		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3000
  • 3000:$1.1663
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 3000
  • 3000:€1.7659
  • 6000:€1.2369
  • 12000:€1.0199
  • 18000:€0.9059
  • 30000:€0.8569
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2071
  • 1:$0.8239
  • 30:$0.8219
  • 75:$0.8199
  • 150:$0.8179
  • 375:$0.8159
  • 750:$0.8139
  • 1500:$0.8119
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7809
  • 6000:$0.7569
  • 12000:$0.7269
  • 18000:$0.7069
  • 30000:$0.6879
SIR470DP-T1-GE3
DISTI # 69W7167		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 69W7167)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$3.4000
  • 25:$2.8200
  • 50:$2.5100
  • 100:$2.1800
  • 250:$2.0500
  • 500:$1.9200
  • 1000:$1.8200
SIR470DP-T1-GE3
DISTI # 69W7167		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$3.4000
  • 25:$2.8200
  • 50:$2.5100
  • 100:$2.1800
  • 250:$2.0500
  • 500:$1.9200
  • 1000:$1.8200
SIR470DP-T1-GE3
DISTI # 16P3655		Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes0
  • 1:$1.5200
  • 3000:$1.5200
SIR470DP-T1-GE3.
DISTI # 30AC0120		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$1.5200
  • 3000:$1.5200
SIR470DP-T1-GE3
DISTI # 781-SIR470DP-T1-GE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		4162
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.5500
  • 3000:$1.5200
SIR470DP-T1-GE3Vishay Intertechnologies 1438
    SIR470DP-T1-GE3
    DISTI # C1S803601363615    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		3100
    • 250:$1.2639
    • 100:$1.4043
    • 25:$1.5360
    • 10:$1.7066
    SIR470DP-T1-GE3
    DISTI # C1S806001173655    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		3000
    • 3000:$1.1623
    SIR470DP-T1-GE3
    DISTI # 2335403    		Vishay IntertechnologiesMOSFET, N CH, 40V, 60A, POWERPAK SO
    RoHS: Compliant    		2477
    • 1:$4.4800
    • 10:$3.7200
    • 100:$2.8800
    • 500:$2.5400
    • 1000:$2.4100
    • 3000:$2.4100
    SIR470DP-T1-GE3
    DISTI # 2335403    		Vishay IntertechnologiesMOSFET, N CH, 40V, 60A, POWERPAK SO
    RoHS: Compliant    		2547
    • 1:£2.1800
    • 10:£1.8200
    • 100:£1.4000
    • 250:£1.3200
    • 500:£1.2300
    SIR470DP-T1-GE3
    DISTI # XSFP00000063578    		Vishay Siliconix 
    RoHS: Compliant    		4038
    • 3000:$1.5200
    • 4038:$1.3800
    SIR470DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas - 24000
    • 3000:$0.7360
    • 6000:$0.6960
    • 12000:$0.6740
    • 24000:$0.6640
    SIR470DP-T1-GE3.Vishay IntertechnologiesMOSFET 40V 60A 104W 2.3mohm @ 10V
    RoHS: Compliant    		Americas - 460
    • 10:$1.3200
    • 100:$1.0160
    • 250:$0.9330
    • 500:$0.8480
    • 1000:$0.7710
    छवि भाग # विवरण
    SIR470DP-T1-GE3

    Mfr.#: SIR470DP-T1-GE3

    OMO.#: OMO-SIR470DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
    SIR470DP

    Mfr.#: SIR470DP

    OMO.#: OMO-SIR470DP-1190

    		 नयाँ र मौलिक
    SIR470DP-T1-E3

    Mfr.#: SIR470DP-T1-E3

    OMO.#: OMO-SIR470DP-T1-E3-1190

    		 नयाँ र मौलिक
    SIR470DP-T1-GE3

    Mfr.#: SIR470DP-T1-GE3

    OMO.#: OMO-SIR470DP-T1-GE3-VISHAY

    		 MOSFET N-CH 40V 60A PPAK SO-8
    SIR470DP-T1-GE3 BSC017

    Mfr.#: SIR470DP-T1-GE3 BSC017

    OMO.#: OMO-SIR470DP-T1-GE3-BSC017-1190

    		 नयाँ र मौलिक
    SIR470DP-T1-GE3-Z

    Mfr.#: SIR470DP-T1-GE3-Z

    OMO.#: OMO-SIR470DP-T1-GE3-Z-1190

    		 नयाँ र मौलिक
    SIR470DP-T1-GE3.

    Mfr.#: SIR470DP-T1-GE3.

    OMO.#: OMO-SIR470DP-T1-GE3--1190

    		 N CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0019ohm, Rds(on) Test Voltage Vg
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    2000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIR470DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
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    10
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    100
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    500
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    1000
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