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SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3
Mfr. #:
SIDR870ADP-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 100V 95A SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIDR870ADP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIDR870ADP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SIDR, SID
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 100V 95A SO-8
***ark
Mosfet, N-Ch, 100V, 95A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 100V, 95A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:95A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
भाग # Mfg। विवरण स्टक मूल्य
SIDR870ADP-T1-GE3
DISTI # V72:2272_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 75000:$0.8958
  • 30000:$0.9084
  • 15000:$0.9209
  • 6000:$0.9335
  • 3000:$0.9460
  • 1000:$0.9585
  • 500:$1.1163
  • 250:$1.1842
  • 100:$1.3246
  • 50:$1.5084
  • 25:$1.6760
  • 10:$1.6987
  • 1:$2.2457
SIDR870ADP-T1-GE3
DISTI # V99:2348_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE30
  • 6000:$0.9696
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.9030
  • 3000:$0.9377
SIDR870ADP-T1-GE3
DISTI # 31950099		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 7:$2.2457
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR870ADP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.8479
  • 30000:$0.8709
  • 18000:$0.8959
  • 12000:$0.9339
  • 6000:$0.9619
SIDR870ADP-T1-GE3
DISTI # 59AC7342		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.8270
  • 6000:$0.8600
  • 4000:$0.8930
  • 2000:$0.9930
  • 1000:$1.0500
  • 1:$1.1200
SIDR870ADP-T1-GE3
DISTI # 50AC9645		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5622
  • 500:$1.1700
  • 250:$1.2600
  • 100:$1.3400
  • 50:$1.4700
  • 25:$1.6000
  • 10:$1.7300
  • 1:$2.0800
SIDR870ADP-T1-GE3
DISTI # 78-SIDR870ADP-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		8917
  • 1:$2.0600
  • 10:$1.7100
  • 100:$1.3300
  • 500:$1.1600
  • 1000:$0.9600
  • 3000:$0.8940
  • 6000:$0.8600
  • 9000:$0.8270
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO
RoHS: Compliant		5622
  • 1000:$1.5600
  • 500:$1.8800
  • 100:$2.2800
  • 10:$2.8400
  • 1:$3.1600
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO5652
  • 500:£0.8910
  • 250:£0.9560
  • 100:£1.0200
  • 10:£1.3400
  • 1:£1.8000
छवि भाग # विवरण
SIDR870ADP-T1-GE3

Mfr.#: SIDR870ADP-T1-GE3

OMO.#: OMO-SIDR870ADP-T1-GE3

 MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
SIDR870ADP-T1-GE3

Mfr.#: SIDR870ADP-T1-GE3

OMO.#: OMO-SIDR870ADP-T1-GE3-VISHAY

 MOSFET N-CH 100V 95A SO-8
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
SIDR870ADP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
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10
US$ ०.००
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100
US$ ०.००
US$ ०.००
500
US$ ०.००
US$ ०.००
1000
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US$ ०.००
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