OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

BSZ100N06LS3

BSZ100N06LS3
Mfr. #:
BSZ100N06LS3
निर्माता:
Infineon Technologies
विवरण:
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSZ100N06LS3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
FETs - एकल
शृङ्खला
OptiMOS
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
OptiMOS
प्याकेज-केस
8-PowerVDFN
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PG-TSDSON-8 (3.3x3.3)
कन्फिगरेसन
एकल क्वाड ड्रेन ट्रिपल स्रोत
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
50W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
60V
इनपुट-Capacitance-Ciss-Vds
3500pF @ 30V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
11A (Ta), 20A (Tc)
Rds-on-max-Id-Vgs
10 mOhm @ 20A, 10V
Vgs-th-max-Id
2.2V @ 23μA
गेट-चार्ज-Qg-Vgs
45nC @ 10V
Pd-शक्ति-डिसिपेशन
2.1 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
8 ns
उदय-समय
58 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
20 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
60 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
10 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
19 ns
सामान्य-टर्न-अन-डिले-समय
8 ns
च्यानल-मोड
वृद्धि
Tags
BSZ100N06LS, BSZ100N06L, BSZ100N06, BSZ100, BSZ10, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
BSZ100N06LS3GATMA1
DISTI # V72:2272_06384814		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1722
  • 3000:$0.3721
  • 1000:$0.3758
  • 500:$0.4625
  • 250:$0.5169
  • 100:$0.5225
  • 25:$0.6506
  • 10:$0.6584
  • 1:$0.7557
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.4025
BSZ100N06LS3GATMA1
DISTI # 31078933		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 10000:$0.3626
  • 5000:$0.3759
BSZ100N06LS3GATMA1
DISTI # 31338070		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5320
BSZ100N06LS3GATMA1
DISTI # 31066196		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4039
BSZ100N06LS3GATMA1
DISTI # 31433908		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1733
  • 17:$0.7557
BSZ100N06LS3 G
DISTI # 31073348		Infineon Technologies AGBSZ100N06LS3 G
RoHS: Compliant		270
  • 200:$0.5355
  • 100:$0.5534
  • 50:$0.6337
  • 22:$0.9422
BSZ100N06LS3G
DISTI # BSZ100N06LS3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: BSZ100N06LS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.3930
  • 10000:$0.3821
  • 15000:$0.3718
  • 25000:$0.3620
  • 50000:$0.3573
  • 125000:$0.3527
  • 250000:$0.3482
BSZ100N06LS3G
DISTI # SP000453672		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: SP000453672)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.5899
  • 10000:€0.5009
  • 20000:€0.4459
  • 30000:€0.4009
  • 50000:€0.3719
BSZ100N06LS3GXT
DISTI # BSZ100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3939
  • 10000:$0.3929
  • 20000:$0.3919
  • 30000:$0.3909
  • 50000:$0.3899
BSZ100N06LS3GATMA1.
DISTI # 25AC6456		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3580
  • 10000:$0.3570
  • 20000:$0.3560
  • 30000:$0.3550
BSZ100N06LS3GATMA1
DISTI # 47W3363		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes1800
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
BSZ100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3800
BSZ100N06LS3GATMA1
DISTI # 726-BSZ100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		364
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3 G
DISTI # 726-BSZ100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		347
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3GATMA1
DISTI # 7528255		Infineon Technologies AGMOSFET N-CHANNEL 60V 11A TSDSON8, PK275
  • 5:£0.6420
  • 50:£0.5120
  • 250:£0.3920
  • 1250:£0.2880
  • 2500:£0.2800
BSZ100N06LS3 GInfineon Technologies AG 295
    BSZ100N06LS3 G
    DISTI # C1S322000698008    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		270
    • 200:$0.4200
    • 100:$0.4340
    • 50:$0.4970
    • 10:$0.7390
    • 5:$0.9120
    BSZ100N06LS3GATMA1
    DISTI # C1S322000721254    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		15000
    • 10000:$0.3626
    • 5000:$0.3759
    BSZ100N06LS3GATMA1
    DISTI # C1S322000463253    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		1733
    • 250:$0.5158
    • 100:$0.5214
    • 25:$0.6491
    • 10:$0.6569
    BSZ100N06LS3GATMA1
    DISTI # C1S322000408964    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.4130
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		1800
    • 1:$1.4400
    • 10:$1.2200
    • 100:$0.9370
    • 500:$0.8280
    • 1000:$0.6540
    • 5000:$0.5800
    BSZ100N06LS3 GInfineon Technologies AGRoHS(ship within 1day)240
    • 1:$1.4300
    • 10:$1.0700
    • 50:$0.8900
    • 100:$0.7100
    • 500:$0.6100
    • 1000:$0.5700
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		2850
    • 5:£0.6550
    • 25:£0.5220
    • 100:£0.4570
    • 250:£0.4000
    • 500:£0.3430
    छवि भाग # विवरण
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N06NSATMA1

    Mfr.#: BSZ100N06NSATMA1

    OMO.#: OMO-BSZ100N06NSATMA1

    		 MOSFET MV POWER MOS
    BSZ100N03LS G

    Mfr.#: BSZ100N03LS G

    OMO.#: OMO-BSZ100N03LS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
    BSZ100N03

    Mfr.#: BSZ100N03

    OMO.#: OMO-BSZ100N03-1190

    		 नयाँ र मौलिक
    BSZ100N03LSG

    Mfr.#: BSZ100N03LSG

    OMO.#: OMO-BSZ100N03LSG-1190

    		 Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G-1190

    		 Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: BSZ100N03MS G)
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 40A TDSON-8
    BSZ100N06LS3GATMA

    Mfr.#: BSZ100N06LS3GATMA

    OMO.#: OMO-BSZ100N06LS3GATMA-1190

    		 नयाँ र मौलिक
    BSZ100N03LSGATMA1-CUT TAPE

    Mfr.#: BSZ100N03LSGATMA1-CUT TAPE

    OMO.#: OMO-BSZ100N03LSGATMA1-CUT-TAPE-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5500
    मात्रा प्रविष्ट गर्नुहोस्:
    BSZ100N06LS3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.००
    US$ ०.००
    10
    US$ ०.००
    US$ ०.००
    100
    US$ ०.००
    US$ ०.००
    500
    US$ ०.००
    US$ ०.००
    1000
    US$ ०.००
    US$ ०.००
    बाट सुरु गर्नुहोस्
    Top