SI6968BEDQ-T1-E3

Mfr. #:: SI6968BEDQ-T1-E3
निर्माता:: Vishay
विवरण:: MOSFET 2N-CH 20V 5.2A 8TSSOP
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI6968BEDQ-T1-E3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI6968BEDQ-T1-E3 Datasheet SI6968BEDQ-T1-E3 Datasheet (P4-P6)SI6968BEDQ-T1-E3 Datasheet (P7-P9)SI6968BEDQ-T1-E3 Datasheet (P10-P11)
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: TrenchFETR

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI6968BEDQ-E3

एकाइ - वजन: 0.005573 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-TSSOP (0.173", 4.40mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-TSSOP

कन्फिगरेसन: दोहोरो

FET-प्रकार: 2 N-Channel (Dual) Common Drain

पावर-अधिकतम: 1W

ट्रान्जिस्टर-प्रकार: 2 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 20V

इनपुट-Capacitance-Ciss-Vds: -

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 5.2A

Rds-on-max-Id-Vgs: 22 mOhm @ 6.5A, 4.5V

Vgs-th-max-Id: 1.6V @ 250μA

गेट-चार्ज-Qg-Vgs: 18nC @ 4.5V

Pd-शक्ति-डिसिपेशन: 1.5 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 510 ns

उदय-समय: 330 ns

Vgs-गेट-स्रोत-भोल्टेज: 12 V

आईडी-निरन्तर-नाली-वर्तमान: 6.5 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 20 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 22 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 860 ns

सामान्य-टर्न-अन-डिले-समय: 245 ns

फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम: 30 S

च्यानल-मोड: वृद्धि

Tags: SI6968BEDQ-T1-E, SI6968BEDQ-T1, SI6968BEDQ-T, SI6968BEDQ, SI6968BED, SI6968B, SI6968, SI696, SI69, SI6

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI6968BEDQ-T1-E3 DISTI # V72:2272_09215422	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.3701 1000:$0.5217 500:$0.6165 250:$0.6629 100:$0.7366 25:$0.8474 10:$0.8599 1:$0.9237
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2213In Stock	1000:$0.6798 500:$0.8611 100:$1.1103 10:$1.4050 1:$1.5900
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2213In Stock	1000:$0.6798 500:$0.8611 100:$1.1103 10:$1.4050 1:$1.5900
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6160
SI6968BEDQ-T1-E3 DISTI # 29433491	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.3701 1000:$0.5217 500:$0.6165 250:$0.6629 100:$0.7366 26:$0.8474
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6968BEDQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2539 6000:$0.2469 12000:$0.2369 18000:$0.2299 30000:$0.2239
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R (Alt: SI6968BEDQ-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4459 6000:€0.3039 12000:€0.2619 18000:€0.2419 30000:€0.2249
SI6968BEDQ-T1-E3 DISTI # 06J8126	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R - Product that comes on tape, but is not reeled (Alt: 06J8126) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.9900 25:$1.7600 50:$1.5800 100:$1.4000 250:$1.2500 500:$1.0800 1000:$0.8530
SI6968BEDQ-T1-E3 DISTI # 06J8126	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1W , RoHS Compliant: Yes	2343	1:$1.9900 25:$1.7600 50:$1.5800 100:$1.4000 250:$1.2500 500:$1.0800 1000:$0.8530
SI6968BEDQ-T1-E3. DISTI # 28AC2158	Vishay Intertechnologies	N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD , ROHS COMPLIANT: NO	0	1:$0.2540 6000:$0.2470 12000:$0.2370 18000:$0.2300 30000:$0.2240
SI6968BEDQ-T1-E3 DISTI # 70026260	Vishay Siliconix	SI6968BEDQ-T1-E3 N-channel MOSFET Module,5.2 A,20 V,8-Pin TSSOP RoHS: Compliant	0	3000:$0.6200 6000:$0.5800 9000:$0.5500
SI6968BEDQ-T1-E3/BKN DISTI # 70026373	Vishay Siliconix	N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD RoHS: Compliant	0	1:$0.7100 250:$0.6700 500:$0.6400 1000:$0.6100 2000:$0.5800
SI6968BEDQ-T1-E3	Vishay Intertechnologies	Dual N-Channel 20 V 0.022 Ohms Surface Mount Power Mosfet - TSSOP-8 RoHS: Compliant	57000Reel	3000:$0.3850
SI6968BEDQ-T1-E3 DISTI # 781-SI6968BEDQ-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8 RoHS: Compliant	2347	1:$1.6600 10:$1.4700 100:$1.1700 500:$0.9010 1000:$0.7110 3000:$0.6440
SI6968BEDQ-T1 DISTI # 781-SI6968BEDQ	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8 RoHS: Not compliant	0
SI6968BEDQ-T1-E3	Vishay Intertechnologies		17949
SI6968BEDQ-T1-E3 DISTI # C1S803600929566	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	250:$0.6592 100:$0.7324 25:$0.8416 10:$0.8539
SI6968BEDQ-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8	Americas -
SI6968BEDQ-T1-E3 DISTI # 2300518	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8 RoHS: Compliant	2343	1:$2.5200 10:$2.2300 100:$1.7600 500:$1.3700 1000:$1.0800
SI6968BEDQ-T1-E3 DISTI # XSFP00000103646	Vishay Siliconix	RoHS: Compliant	38361	3000:$0.7700 38361:$0.7000
SI6968BEDQ-T1-E3 DISTI # 2300518	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP RoHS: Compliant	2343	1:£1.7400 25:£1.5500 50:£1.3800 100:£1.2300 250:£1.1000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI6968BEDQ-T1-GE3 OMO.#: OMO-SI6968BEDQ-T1-GE3	MOSFET 20V Vds 12V Vgs TSSOP-8
	Mfr.#: SI6968BEDQ-T1 OMO.#: OMO-SI6968BEDQ-T1-1190	MOSFET RECOMMENDED ALT 781-SI6968BEDQ-E3
	Mfr.#: SI6968BEDQ-T1-E3 OMO.#: OMO-SI6968BEDQ-T1-E3-VISHAY	MOSFET 2N-CH 20V 5.2A 8TSSOP
	Mfr.#: SI6968BEDQ-T1-E3. OMO.#: OMO-SI6968BEDQ-T1-E3--1190	Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po
	Mfr.#: SI6968BEDQ-T1-GE3 OMO.#: OMO-SI6968BEDQ-T1-GE3-VISHAY	MOSFET 2N-CH 20V 5.2A 8-TSSOP
	Mfr.#: SI6968BEDQ-T1-T1-E3 OMO.#: OMO-SI6968BEDQ-T1-T1-E3-1190	नयाँ र मौलिक
	Mfr.#: SI6968BEDQ-T1/6968E OMO.#: OMO-SI6968BEDQ-T1-6968E-1190	नयाँ र मौलिक
	Mfr.#: SI6968BEDQ-TI OMO.#: OMO-SI6968BEDQ-TI-1190	नयाँ र मौलिक
	Mfr.#: SI6968BEDQ-TI-E3 OMO.#: OMO-SI6968BEDQ-TI-E3-1190	नयाँ र मौलिक
	Mfr.#: SI6968BEDQT1GE3 OMO.#: OMO-SI6968BEDQT1GE3-1190	Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
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SI6968BEDQ-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.२४~~; ~~US$ ०.२४~~

10: ~~US$ ०.२३~~; ~~US$ २.२८~~

100: ~~US$ ०.२२~~; ~~US$ २१.६०~~

500: ~~US$ ०.२०~~; ~~US$ १०२.००~~

1000: ~~US$ ०.१९~~; ~~US$ १९२.००~~

बाट सुरु गर्नुहोस्

SI6968BEDQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes