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2N5116UB

2N5116UB
Mfr. #:
2N5116UB
निर्माता:
Microchip / Microsemi
विवरण:
Trans JFET P-CH 30V 3-Pin UB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
2N5116UB डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
2N5116, 2N511, 2N51, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET
***ical
Trans JFET P-CH 30V 4-Pin Case UB
***ark
JFET ROHS COMPLIANT: YES
***i-Key
P CHANNEL JFET
***ure Electronics
MMBFJ270 Series 30 V 15 mA Surface Mount P-Channel Switch - SOT-23
***ment14 APAC
P CHANNEL JFET, 30V, SOT-23; Transistor; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Drain
***et Europe
Trans JFET P-CH 3-Pin SOT-23 T/R
***r Electronics
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Source Electronics
JFET P-CH 30V 0.225W SOT23 / Trans JFET P-CH 3-Pin SOT-23 T/R
***ure Electronics
MMBFJ175 Series 30 V 60 mA Surface Mount P-Channel Switch - SOT-23
***rchild Semiconductor
P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
***ure Electronics
MMBFJ177 Series 30 V 20 mA Surface Mount P-Channel Switch - SOT-23
***rchild Semiconductor
P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
***ment14 APAC
TRANSISTOR, JFET, P, SMD, SOT-23; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss:-1.5mA to -20mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.5V; Power Dissipation Pd:225mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:20mA; Current Idss Min:1.5mA; Package / Case:SOT-23; Power Dissipation Pd:225mW; Power Dissipation Ptot Max:225mW; Termination Type:SMD; Transistor Polarity:P Channel
***ark
Jfet Transistor, Junction Field Effect, Jfet, 30 V, 7 Ma, 70 Ma, 6 V, Sot-23 Rohs Compliant: Yes
***th Star Micro
Transistor JFET P-CH 30V 70mA 3-Pin TO-236AB T/R
***ponent Stockers USA
30 V P-CHANNEL Si SMALL SIGNAL JFET
*** Americas
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
*** Services
CoC and 2-years warranty / RFQ for pricing
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR MOSFET
***nell
JFET,P CH,30V,0.03A,SOT23; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: 7mA; Zero Gate Voltage Drain Current Idss Max: 70mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id: 70mA; No. of Pins: 3Pins; On Resistance Rds(on): 125ohm; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 300mW; Termination Type: Surface Mount Device; Transistor Polarity: P Channel; Voltage Vds Typ: 30V; Zero Gate Voltage Drain Current Idss: 7mA to 70mA
***el Electronic
VISHAY SST174-E3 JFET Transistor, JFET, 30 V, -20 mA, -135 mA, 10 V, TO-236, JFET
***nell
JFET; Transistor Polarity:Dual P Channel
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ment14 APAC
TRANSISTOR, JFET, DUAL, P; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss:-20mA to -135mA; Gate-Source Cutoff Voltage Vgs(off) Max:10V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-236; No. of Pins:3; Current Idss Max:135mA; Current Idss Min:20mA; Package / Case:TO-236; Termination Type:SMD; Transistor Polarity:P Channel
*** Electronics
NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
***ure Electronics
PMBFJ174 Series 30 V 20 mA P-Channel Silicon Field-Effect Transistor - SOT-23-3
***ment14 APAC
RF JFET, N CH, 30V, 135MA, 3-SOT-23; TRA; Transistor Type:RF JFET; Breakdown Voltage Vbr:30V; Zero Gate
***nell
RF JFET, N CHANNEL, 30V, 135MA, 3-SOT-23
***ical
Trans JFET P-CH 30V 135mA Si 3-Pin TO-236AB T/R
***eco
PMBFJ174,215,TAPE7 J-FET, SOT 23, R77
*** Americas
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR MOSFET
भाग # Mfg। विवरण स्टक मूल्य
2N5116UB
DISTI # V36:1790_17821296		Microsemi CorporationTrans JFET P-CH 30V 3-Pin UB
RoHS: Not compliant		33
  • 25:$56.7900
  • 1:$90.8600
2N5116UB
DISTI # V36:1790_09098079		Microsemi CorporationTrans JFET P-CH 30V 3-Pin UB
RoHS: Not compliant		0
  • 100000:$42.8100
  • 50000:$42.8200
  • 10000:$43.2900
  • 1000:$44.2100
  • 100:$44.3600
2N5116UB
DISTI # 2N5116UB-ND		Microsemi CorporationP CHANNEL JFET
Min Qty: 100
Container: Bulk		Limited Supply - Call
    2N5116UB
    DISTI # 30525616    		Microsemi CorporationTrans JFET P-CH 30V 3-Pin UB
    RoHS: Not compliant    		33
    • 25:$56.7900
    • 1:$90.8600
    छवि भाग # विवरण
    2N5190G

    Mfr.#: 2N5190G

    OMO.#: OMO-2N5190G

    		 Bipolar Transistors - BJT BIP NPN 4A 40V
    2N5114JTX02

    Mfr.#: 2N5114JTX02

    OMO.#: OMO-2N5114JTX02

    		 JFET 19500/476 JANTX2N5114
    2N5115JTVL02

    Mfr.#: 2N5115JTVL02

    OMO.#: OMO-2N5115JTVL02

    		 JFET 19500/476 JANTXV2N5115 Sdr Dp
    2N5116JTVL02

    Mfr.#: 2N5116JTVL02

    OMO.#: OMO-2N5116JTVL02

    		 JFET
    2N5133

    Mfr.#: 2N5133

    OMO.#: OMO-2N5133-1190

    		 Bipolar Junction Transistor, NPN Type, TO-106
    2N5154L

    Mfr.#: 2N5154L

    OMO.#: OMO-2N5154L-MICROSEMI

    		 PNP POWER SILICON TRANSISTOR
    2N5191G.

    Mfr.#: 2N5191G.

    OMO.#: OMO-2N5191G--1190

    		 Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:2MHz, Power Dissipation Pd:40W, DC Collector Current:4A, DC Current Gain hFE:2hFE, No. of Pins:3Pins, Op
    2N5191G

    Mfr.#: 2N5191G

    OMO.#: OMO-2N5191G-ON-SEMICONDUCTOR

    		 TRANS NPN 60V 4A TO225AA
    2N5114JAN02

    Mfr.#: 2N5114JAN02

    OMO.#: OMO-2N5114JAN02-VISHAY

    		 JFET P-CH 30V TO-206AA
    2N5115-E3

    Mfr.#: 2N5115-E3

    OMO.#: OMO-2N5115-E3-VISHAY

    		 JFET P-CH 30V TO-18
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3000
    मात्रा प्रविष्ट गर्नुहोस्:
    2N5116UB को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ७३.४२
    US$ ७३.४२
    10
    US$ ६९.७५
    US$ ६९७.५४
    100
    US$ ६६.०८
    US$ ६ ६०८.२५
    500
    US$ ६२.४१
    US$ ३१ २०५.६५
    1000
    US$ ५८.७४
    US$ ५८ ७४०.००
    बाट सुरु गर्नुहोस्
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