NE3511S02-T1C-A

NE3511S02-T1C-A
Mfr. #:
NE3511S02-T1C-A
निर्माता:
CEL
विवरण:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NE3511S02-T1C-A डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3511S02-T1C-A DatasheetNE3511S02-T1C-A Datasheet (P4-P6)NE3511S02-T1C-A Datasheet (P7-P9)NE3511S02-T1C-A Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
CEL
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
S0-2
प्रविधि
GaAs
ट्रान्जिस्टर-प्रकार
HFET
पाउनु
13.5 dB
Pd-शक्ति-डिसिपेशन
165 mW
अधिकतम-सञ्चालन-तापमान
+ 125 C
सञ्चालन - आवृत्ति
12 GHz
आईडी-निरन्तर-नाली-वर्तमान
70 mA
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
4 V
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
65 mS
Vgs-गेट-स्रोत-ब्रेकडाउन-भोल्टेज
- 3 V
NF-शोर-चित्र
0.3 dB
Tags
NE3511, NE351, NE35, NE3
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
NE3511S02-T1C-A
DISTI # NE3511S02-T1C-ATR-ND
California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3511S02-T1C-A
    DISTI # NE3511S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3511S02-T1C-A
      DISTI # NE3511S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)IC AMP RF LNA 13.5DB S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3511S02-T1C-A
        DISTI # 551-NE3511S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        RoHS: Compliant
        0
          छवि भाग # विवरण
          NE3511S02A

          Mfr.#: NE3511S02A

          OMO.#: OMO-NE3511S02A-1190

          Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A)
          NE3511S02-A

          Mfr.#: NE3511S02-A

          OMO.#: OMO-NE3511S02-A-CEL

          RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch
          NE3511S02-T1C-A

          Mfr.#: NE3511S02-T1C-A

          OMO.#: OMO-NE3511S02-T1C-A-CEL

          RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          4000
          मात्रा प्रविष्ट गर्नुहोस्:
          NE3511S02-T1C-A को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ १.१२
          US$ १.१२
          10
          US$ १.०७
          US$ १०.६९
          100
          US$ १.०१
          US$ १०१.२५
          500
          US$ ०.९६
          US$ ४७८.१५
          1000
          US$ ०.९०
          US$ ९००.००
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