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IRF7379TRPBF

IRF7379TRPBF
Mfr. #:
IRF7379TRPBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET N/P-CH 30V 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF7379TRPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IRF7379TRPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
FETs - arrays
शृङ्खला
HEXFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
एकाइ - वजन
0.019048 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
1 N-Channel 1 P-Channel
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
2.5W
ट्रान्जिस्टर-प्रकार
1 N-Channel 1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
520pF @ 25V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
5.8A, 4.3A
Rds-on-max-Id-Vgs
45 mOhm @ 5.8A, 10V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
25nC @ 10V
Pd-शक्ति-डिसिपेशन
2.5 W
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
5.8 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
75 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल P- च्यानल
Qg-गेट-चार्ज
16.7 nC
Tags
IRF7379, IRF737, IRF73, IRF7, IRF
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Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRF7379TRPBF
DISTI # IRF7379PBFCT-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFDKR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3018In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
IRF7379TRPBF
DISTI # IRF7379PBFTR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.3788
IRF7379TRPBF
DISTI # IRF7379TRPBF		Infineon Technologies AGTrans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7379TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2729
  • 8000:$0.2629
  • 16000:$0.2539
  • 24000:$0.2449
  • 40000:$0.2409
IRF7379TRPBF
DISTI # 34AC1779		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3390
  • 1:$0.8900
  • 10:$0.7370
  • 25:$0.6500
  • 50:$0.5620
  • 100:$0.4750
  • 250:$0.4430
  • 500:$0.4120
  • 1000:$0.3800
IRF7379TRPBF
DISTI # 70018897		Infineon Technologies AGMOSFET,DUAL N/P-CHANNEL,30V,5.8A,SO-8
RoHS: Compliant		0
  • 4000:$1.2600
  • 8000:$1.2350
  • 20000:$1.1970
  • 40000:$1.1470
  • 100000:$1.0710
IRF7379TRPBF
DISTI # 942-IRF7379TRPBF		Infineon Technologies AGMOSFET MOSFT DUAL N/PCh 30V 5.8A
RoHS: Compliant		3835
  • 1:$0.8900
  • 10:$0.7370
  • 100:$0.4750
  • 1000:$0.3800
  • 4000:$0.3210
  • 8000:$0.3090
  • 24000:$0.2970
IRF7379TRPBF
DISTI # 2781211		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant		3390
  • 5:$1.2300
  • 25:$1.0700
  • 100:$0.8750
  • 250:$0.7390
  • 500:$0.6400
  • 1000:$0.6050
  • 5000:$0.5730
IRF7379TRPBF
DISTI # 2781211		Infineon Technologies AGMOSFET, N & P-CH, 30V, 5.8A, SOIC
RoHS: Compliant		3390
  • 5:£0.8360
  • 25:£0.7520
  • 100:£0.5790
  • 250:£0.5040
  • 500:£0.4290
छवि भाग # विवरण
IRF7379TRPBF

Mfr.#: IRF7379TRPBF

OMO.#: OMO-IRF7379TRPBF

 MOSFET MOSFT DUAL N/PCh 30V 5.8A
IRF737LCPBF

Mfr.#: IRF737LCPBF

OMO.#: OMO-IRF737LCPBF

 MOSFET N-Chan 300V 6.1 Amp
IRF7379PBF

Mfr.#: IRF7379PBF

OMO.#: OMO-IRF7379PBF

 MOSFET 30V DUAL N / P CH 20V VGS MAX
IRF7379

Mfr.#: IRF7379

OMO.#: OMO-IRF7379-INFINEON-TECHNOLOGIES

 MOSFET N/P-CH 30V 8-SOIC
IRF7379TR

Mfr.#: IRF7379TR

OMO.#: OMO-IRF7379TR-INFINEON-TECHNOLOGIES

 MOSFET N/P-CH 30V 8-SOIC
IRF737LCL

Mfr.#: IRF737LCL

OMO.#: OMO-IRF737LCL-VISHAY

 MOSFET N-CH 300V 6.1A TO-262
IRF737LCSTRL

Mfr.#: IRF737LCSTRL

OMO.#: OMO-IRF737LCSTRL-VISHAY

 MOSFET N-CH 300V 6.1A D2PAK
IRF7379PBF

Mfr.#: IRF7379PBF

OMO.#: OMO-IRF7379PBF-INFINEON-TECHNOLOGIES

 MOSFET N/P-CH 30V 8-SOIC
IRF7379QTRPBF.

Mfr.#: IRF7379QTRPBF.

OMO.#: OMO-IRF7379QTRPBF--1190

 नयाँ र मौलिक
IRF737LC

Mfr.#: IRF737LC

OMO.#: OMO-IRF737LC-VISHAY

 MOSFET N-CH 300V 6.1A TO-220AB
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
IRF7379TRPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.३६
US$ ०.३६
10
US$ ०.३४
US$ ३.४३
100
US$ ०.३३
US$ ३२.५२
500
US$ ०.३१
US$ १५३.५५
1000
US$ ०.२९
US$ २८९.१०
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