MR2A08AYS35R

MR2A08AYS35R
Mfr. #:
MR2A08AYS35R
निर्माता:
Everspin Technologies
विवरण:
NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MR2A08AYS35R डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MR2A08AYS35R थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Everspin Technologies Inc.
उत्पादन कोटि
मेमोरी
शृङ्खला
MR2A08A
प्याकेजिङ
टेप र रिल (TR) वैकल्पिक प्याकेजिङ
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TSOP-44
सञ्चालन - तापक्रम
0°C ~ 70°C (TA)
इन्टरफेस
समानान्तर
भोल्टेज - आपूर्ति
3 V ~ 3.6 V
आपूर्तिकर्ता-उपकरण-प्याकेज
44-TSOP2 (10.2x18.4)
मेमोरी साइज
4M (512K x 8)
मेमोरी-प्रकार
MRAM (Magnetoresistive RAM)
गति
35ns
पहुँच-समय
35 ns
ढाँचा- मेमोरी
RAM
अधिकतम-सञ्चालन-तापमान
+ 70 C
न्यूनतम-सञ्चालन-तापमान
0 C
सञ्चालन-आपूर्ति-वर्तमान
50 mA
इन्टरफेस-प्रकार
समानान्तर
संगठन
512 k x 8
डाटा-बस-चौडाइ
8 bit
आपूर्ति-भोल्टेज-अधिकतम
3.6 V
आपूर्ति-भोल्टेज-मिनट
3 V
Tags
MR2A0, MR2A, MR2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***c
    M***c
    SRB

    all fine and as described. Seller recommend.

    2019-06-14
    G***e
    G***e
    BE

    packed in anitstatic bags, very well, not all suppliers do that.

    2019-04-25
***i-Key
IC RAM 4M PARALLEL 44TSOP2
MR2A08A / MR2A16A 4Mb Parallel MRAM
Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
भाग # Mfg। विवरण स्टक मूल्य
MR2A08AYS35R
DISTI # MR2A08AYS35R-ND
Everspin TechnologiesIC RAM 4M PARALLEL 44TSOP2
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1500:$16.5186
MR2A08AYS35R
DISTI # MR2A08AYS35R
Everspin TechnologiesNVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR2A08AYS35R)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel
Europe - 0
  • 1500:€18.0900
  • 3000:€17.3900
  • 6000:€16.6900
  • 9000:€15.4900
  • 15000:€14.4900
MR2A08AYS35
DISTI # 936-MR2A08AYS35
Everspin TechnologiesNVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
RoHS: Compliant
213
  • 1:$21.4700
  • 5:$20.8400
  • 10:$20.0000
  • 25:$19.7800
  • 50:$19.2900
  • 100:$16.9300
  • 250:$16.3600
MR2A08AYS35R
DISTI # 936-MR2A08AYS35R
Everspin TechnologiesNVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
RoHS: Compliant
0
  • 1500:$16.5200
छवि भाग # विवरण
MR2A08ACMA35

Mfr.#: MR2A08ACMA35

OMO.#: OMO-MR2A08ACMA35

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AMYS35

Mfr.#: MR2A08AMYS35

OMO.#: OMO-MR2A08AMYS35

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AYS35R

Mfr.#: MR2A08AYS35R

OMO.#: OMO-MR2A08AYS35R

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AMYS35R

Mfr.#: MR2A08AMYS35R

OMO.#: OMO-MR2A08AMYS35R

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AMA35R

Mfr.#: MR2A08AMA35R

OMO.#: OMO-MR2A08AMA35R

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AMYS35R

Mfr.#: MR2A08AMYS35R

OMO.#: OMO-MR2A08AMYS35R-EVERSPIN-TECHNOLOGIES

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AYS35R

Mfr.#: MR2A08AYS35R

OMO.#: OMO-MR2A08AYS35R-EVERSPIN-TECHNOLOGIES

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AMYS35

Mfr.#: MR2A08AMYS35

OMO.#: OMO-MR2A08AMYS35-EVERSPIN-TECHNOLOGIES

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08ACYS35

Mfr.#: MR2A08ACYS35

OMO.#: OMO-MR2A08ACYS35-EVERSPIN-TECHNOLOGIES

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
MR2A08AYS35

Mfr.#: MR2A08AYS35

OMO.#: OMO-MR2A08AYS35-EVERSPIN-TECHNOLOGIES

NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
MR2A08AYS35R को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २२.३६
US$ २२.३६
10
US$ २१.२५
US$ २१२.४७
100
US$ २०.१३
US$ २ ०१२.८५
500
US$ १९.०१
US$ ९ ५०५.१५
1000
US$ १७.८९
US$ १७ ८९२.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • Nanonics Per MIL-DTL-32139 Dualobe
    TE Connectivity Aerospace, Defense, and Marine's Nanonics products are designed and qualified to MIL-DTL-32139 specifications.
  • THERMOFIT® DR-25 Tubing
    TE Connectivity's THERMOFIT DR-25 tubing offers a flexible, flame retardant, fluid- and abrasion-resistant solution.
  • INSTALITE ZH-150 Tubing
    TE Connectivity's INSTALITE ZH-150 heat-shrinkable tubing combines high-temperature and zero halogen properties in a lightweight material.
  • Compare MR2A08AYS35R
    MR2A08ACMA35 vs MR2A08ACMA35R vs MR2A08ACYS35
  • Raychem S200 Shield Terminators
    TE Connectivity Aerospace, Defense and Marine's S200 shield terminators provide an environmentally protected shield for high temperature cable applications.
  • Multi-Position Backplane RF Modules
    The multi-position backplane RF module from TE has high level of performance to meet the demands of many different applications.
Top