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IRFS59N10DPBF

IRFS59N10DPBF
Mfr. #:
IRFS59N10DPBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 100V 59A D2PAK
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFS59N10DPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS59N10DPBF DatasheetIRFS59N10DPBF Datasheet (P4-P6)IRFS59N10DPBF Datasheet (P7-P9)IRFS59N10DPBF Datasheet (P10-P12)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
IR
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.139332 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TO-252-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
200 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
12 ns
उदय-समय
90 ns
Vgs-गेट-स्रोत-भोल्टेज
30 V
आईडी-निरन्तर-नाली-वर्तमान
59 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
25 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
20 ns
सामान्य-टर्न-अन-डिले-समय
16 ns
Qg-गेट-चार्ज
76 nC
च्यानल-मोड
वृद्धि
Tags
IRFS59, IRFS5, IRFS, IRF
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;D2Pak;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 100V 0.025 Ohm 76 nC HEXFET® Power Mosfet - D2PAK
***eco
Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 2+ Tab D2pak
*** Source Electronics
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 59A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:59A; Current Temperature:25°C; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:236A; SMD Marking:59N10; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
भाग # Mfg। विवरण स्टक मूल्य
IRFS59N10DPBF
DISTI # V36:1790_13891310		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		4000
  • 2000:$1.4490
  • 1000:$1.5200
  • 500:$1.7620
  • 250:$1.9430
  • 100:$2.0760
  • 10:$2.3210
  • 1:$2.6210
IRFS59N10DPBF
DISTI # IRFS59N10DPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 59A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1806In Stock
  • 1000:$2.2095
  • 500:$2.5765
  • 100:$3.1270
  • 10:$3.7620
  • 1:$4.1800
IRFS59N10DPBF
DISTI # 30572210		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		4000
  • 2000:$1.4490
  • 1000:$1.5200
  • 500:$1.7620
  • 250:$1.9430
  • 100:$2.0760
  • 10:$2.3210
  • 5:$2.6210
IRFS59N10DPBF
DISTI # 27574694		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		500
  • 300:$0.9670
  • 200:$1.0084
  • 100:$1.0536
  • 50:$1.1765
IRFS59N10DPBF
DISTI # SP001571716		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK (Alt: SP001571716)
RoHS: Compliant
Min Qty: 1		Europe - 8000
  • 1:€2.6900
  • 10:€2.2900
  • 25:€2.2900
  • 50:€2.2900
  • 100:€1.8900
  • 500:€1.6900
  • 1000:€1.3900
IRFS59N10DPBF
DISTI # 70017522		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.025Ohm,ID 59A,D2Pak,PD 200W,VGS +/-30V
RoHS: Compliant		0
  • 3200:$3.6400
  • 6400:$3.5670
  • 16000:$3.4580
  • 32000:$3.3120
  • 80000:$3.0940
IRFS59N10DPBF
DISTI # 942-IRFS59N10DPBF		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 25mOhms 76nC
RoHS: Compliant		3718
  • 1:$3.2500
  • 10:$2.7600
  • 100:$2.3900
  • 250:$2.2700
  • 500:$2.0300
  • 1000:$1.7100
  • 2000:$1.6300
IRFS59N10DPBFInfineon Technologies AGPower Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		350
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRFS59N10DPBFInternational RectifierPower Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		3900
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRFS59N10DPBFInternational Rectifier 
RoHS: Compliant		Europe - 600
    IRFS59N10DPBFInfineon Technologies AGINSTOCK710
      IRFS59N10DPBF
      DISTI # 9102302      		Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant      		383
      • 1:£1.0400
      • 10:£0.7850
      • 100:£0.7120
      • 250:£0.6980
      IRFS59N10DPBF
      DISTI # 9102302      		Infineon Technologies AGMOSFET, N, D2-PAK
      RoHS: Compliant      		38
      • 1:$5.1500
      • 10:$4.3800
      • 100:$3.8100
      • 250:$3.6200
      • 500:$3.2300
      • 1000:$2.7200
      • 2000:$2.6000
      IRFS59N10DPBF
      DISTI # C1S322000495854      		Infineon Technologies AGTrans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK Tube
      RoHS: Compliant      		4000
      • 500:$1.7620
      • 250:$1.9430
      • 100:$2.0760
      • 10:$2.3210
      • 1:$2.6210
      छवि भाग # विवरण
      IRFS59N10DTRLP

      Mfr.#: IRFS59N10DTRLP

      OMO.#: OMO-IRFS59N10DTRLP

      		 MOSFET MOSFT 100V 59A 25mOhm 76nC
      IRFS59N10DTRLP-CUT TAPE

      Mfr.#: IRFS59N10DTRLP-CUT TAPE

      OMO.#: OMO-IRFS59N10DTRLP-CUT-TAPE-1190

      		 नयाँ र मौलिक
      IRFS59N10DTRRP

      Mfr.#: IRFS59N10DTRRP

      OMO.#: OMO-IRFS59N10DTRRP-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 59A D2PAK
      IRFS59N10DTRRPBF

      Mfr.#: IRFS59N10DTRRPBF

      OMO.#: OMO-IRFS59N10DTRRPBF-1190

      		 नयाँ र मौलिक
      IRFS59N10DTRLP

      Mfr.#: IRFS59N10DTRLP

      OMO.#: OMO-IRFS59N10DTRLP-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET MOSFT 100V 59A 25mOhm 76nC
      IRFS59N10DPBF

      Mfr.#: IRFS59N10DPBF

      OMO.#: OMO-IRFS59N10DPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 59A D2PAK
      IRFS59N10DTRLPBF

      Mfr.#: IRFS59N10DTRLPBF

      OMO.#: OMO-IRFS59N10DTRLPBF-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5000
      मात्रा प्रविष्ट गर्नुहोस्:
      IRFS59N10DPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ २.३६
      US$ २.३६
      10
      US$ २.२४
      US$ २२.४४
      100
      US$ २.१३
      US$ २१२.५४
      500
      US$ २.०१
      US$ १ ००३.७०
      1000
      US$ १.८९
      US$ १ ८८९.३०
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