SI6926ADQ-T1-E3

Mfr. #:: SI6926ADQ-T1-E3
निर्माता:: Vishay
विवरण:: MOSFET 2N-CH 20V 4.1A 8TSSOP
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI6926ADQ-T1-E3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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थप जानकारी:: SI6926ADQ-T1-E3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: SI6926ADQ

प्याकेजिङ: Digi-ReelR वैकल्पिक प्याकेजिङ

अंश-उपनामहरू: SI6926ADQ-T1

एकाइ - वजन: 0.005573 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-TSSOP (0.173", 4.40mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-TSSOP

कन्फिगरेसन: दोहोरो

FET-प्रकार: 2 N-Channel (Dual)

पावर-अधिकतम: 830mW

ट्रान्जिस्टर-प्रकार: 2 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 20V

इनपुट-Capacitance-Ciss-Vds: -

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 4.1A

Rds-on-max-Id-Vgs: 30 mOhm @ 4.5A, 4.5V

Vgs-th-max-Id: 1V @ 250μA

गेट-चार्ज-Qg-Vgs: 10.5nC @ 4.5V

Pd-शक्ति-डिसिपेशन: 830 mW

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 16 ns

उदय-समय: 16 ns

Vgs-गेट-स्रोत-भोल्टेज: 8 V

आईडी-निरन्तर-नाली-वर्तमान: 4.1 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 20 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 30 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 46 ns

सामान्य-टर्न-अन-डिले-समय: 6 ns

च्यानल-मोड: वृद्धि

Tags: SI6926ADQ-T1-E, SI6926ADQ-T1, SI6926ADQ-T, SI6926AD, SI6926A, SI6926, SI692, SI69, SI6

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6926ADQ-T1-E3 विवरण

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount Power Mosfet - TSSOP-8

***ical: Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R

***ark: Transistor Polarity:dual N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.1A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V Rohs Compliant: No

SI6926ADQ-T1-E3 थप जानकारी

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI6926ADQ-T1-E3 DISTI # V72:2272_09215418	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	5965	3000:$0.3610 1000:$0.3859 500:$0.4716 250:$0.5356 100:$0.5415 25:$0.6670 10:$0.6751 1:$0.7876
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13720In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13720In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.3509
SI6926ADQ-T1-E3 DISTI # 30667537	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	5965	3000:$0.3610 1000:$0.3859 500:$0.4716 250:$0.5356 100:$0.5415 25:$0.6670 19:$0.6751
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6926ADQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5239 6000:$0.5079 12000:$0.4869 18000:$0.4739 30000:$0.4609
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R (Alt: SI6926ADQ-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6869 6000:€0.4689 12000:€0.4029 18000:€0.3719 30000:€0.3469
SI6926ADQ-T1-E3 DISTI # 85W2161	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1W,Product Range:- , RoHS Compliant: No	0	1:$1.0300 10:$0.8420 25:$0.7770 50:$0.7110 100:$0.6460 500:$0.5560 1000:$0.4390
SI6926ADQ-T1-E3. DISTI # 30AC0180	Vishay Intertechnologies	DUAL N-CHANNEL 2.5-V (G-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4360 3000:$0.4310 6000:$0.4250 12000:$0.4200 18000:$0.4150 30000:$0.4100
SI6926ADQ-T1-E3 DISTI # 781-SI6926ADQ-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs TSSOP-8 RoHS: Compliant	5571	1:$1.0300 10:$0.8420 100:$0.6460 500:$0.5560 1000:$0.4390 3000:$0.4100
SI6926ADQ-T1-E3	Vishay Siliconix	4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	17	6:$0.7500 1:$1.0000
SI6926ADQ-T1-E3 DISTI # C1S803603829957	Vishay Intertechnologies	MOSFETs RoHS: Compliant	5965	250:$0.5356 100:$0.5415 25:$0.6670 10:$0.6751
SI6926ADQ-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs TSSOP-8	Americas -

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI6926ADQ-T1-E3 OMO.#: OMO-SI6926ADQ-T1-E3	MOSFET 20V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6926AEDQ-T1-E3 OMO.#: OMO-SI6926AEDQ-T1-E3	MOSFET 20V 4.5A 0.83W
	Mfr.#: SI6926AEDQ-T1-GE3 OMO.#: OMO-SI6926AEDQ-T1-GE3-317	RF Bipolar Transistors MOSFET 20V 4.5A 1.0W 30mohm @ 4.5V
	Mfr.#: SI6926ADQ-T1-E3-CUT TAPE OMO.#: OMO-SI6926ADQ-T1-E3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SI6926ADQ-T1-GE3-CUT TAPE OMO.#: OMO-SI6926ADQ-T1-GE3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SI6926ADQ OMO.#: OMO-SI6926ADQ-1190	नयाँ र मौलिक
	Mfr.#: SI6926ADQ-T1-E3 OMO.#: OMO-SI6926ADQ-T1-E3-VISHAY	MOSFET 2N-CH 20V 4.1A 8TSSOP
	Mfr.#: SI6926ADQ-T1-E3-S OMO.#: OMO-SI6926ADQ-T1-E3-S-1190	नयाँ र मौलिक
	Mfr.#: SI6926ADQ-TE2-E3-PBF OMO.#: OMO-SI6926ADQ-TE2-E3-PBF-1190	नयाँ र मौलिक
	Mfr.#: SI6926ADQT1GE3 OMO.#: OMO-SI6926ADQT1GE3-1190	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

उपलब्धता

स्टक:: Available
अर्डर मा:: 2000
मात्रा प्रविष्ट गर्नुहोस्:

SI6926ADQ-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.४४~~; ~~US$ ०.४४~~

10: ~~US$ ०.४२~~; ~~US$ ४.१७~~

100: ~~US$ ०.४०~~; ~~US$ ३९.५०~~

500: ~~US$ ०.३७~~; ~~US$ १८६.५५~~

1000: ~~US$ ०.३५~~; ~~US$ ३५१.१०~~

बाट सुरु गर्नुहोस्

SI6926ADQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes