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SI2308DS-T1-GE3

SI2308DS-T1-GE3
Mfr. #:
SI2308DS-T1-GE3
निर्माता:
Vishay Intertechnologies
विवरण:
N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2308DS-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
SI2308DS-T, SI2308D, SI2308, SI230, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
***
60V, 160 MOHMS@10V
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.25W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI2308DS-T1-GE3
DISTI # 15R4904		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):125mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes0
    SI2308DS-T1-GE3
    DISTI # 84R8024    		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes0
    • 2500:$0.3430
    • 1000:$0.4340
    • 500:$0.4940
    • 250:$0.5760
    • 100:$0.6470
    • 50:$0.7330
    • 25:$0.8030
    • 1:$0.8970
    SI2308DS-T1-GE3
    DISTI # 781-SI2308DS-GE3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
    RoHS: Compliant    		0
      छवि भाग # विवरण
      SI2308DS-T1-E3

      Mfr.#: SI2308DS-T1-E3

      OMO.#: OMO-SI2308DS-T1-E3

      		 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
      SI2308DS

      Mfr.#: SI2308DS

      OMO.#: OMO-SI2308DS-1190

      		 नयाँ र मौलिक
      SI2308DS-T1

      Mfr.#: SI2308DS-T1

      OMO.#: OMO-SI2308DS-T1-1190

      		 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
      SI2308DS-T1-E3

      Mfr.#: SI2308DS-T1-E3

      OMO.#: OMO-SI2308DS-T1-E3-VISHAY

      		 MOSFET N-CH 60V 2A SOT23-3
      SI2308DS-T1-E3/B02

      Mfr.#: SI2308DS-T1-E3/B02

      OMO.#: OMO-SI2308DS-T1-E3-B02-1190

      		 नयाँ र मौलिक
      SI2308DS-T1-ES , MAX6425

      Mfr.#: SI2308DS-T1-ES , MAX6425

      OMO.#: OMO-SI2308DS-T1-ES-MAX6425-1190

      		 नयाँ र मौलिक
      SI2308DS-T1-GE3

      Mfr.#: SI2308DS-T1-GE3

      OMO.#: OMO-SI2308DS-T1-GE3-1190

      		 N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI2308DS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.५१
      US$ ०.५१
      10
      US$ ०.४९
      US$ ४.८९
      100
      US$ ०.४६
      US$ ४६.३१
      500
      US$ ०.४४
      US$ २१८.६५
      1000
      US$ ०.४१
      US$ ४११.६०
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