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TGF2979-SM

TGF2979-SM
Mfr. #:
TGF2979-SM
निर्माता:
Qorvo
विवरण:
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TGF2979-SM डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
TGF2979-SM थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
कोर्भो
उत्पादन कोटि:
आरएफ JFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर प्रकार:
HEMT
प्रविधि:
GaN SiC
पाउनु:
13 dB
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
32 V
Vgs - गेट-स्रोत ब्रेकडाउन भोल्टेज:
- 2.7 V
आईडी - निरन्तर ड्रेन वर्तमान:
326 mA
आउटपुट पावर:
6 W
अधिकतम परिचालन तापमान:
+ 225 C
Pd - शक्ति अपव्यय:
8.4 W
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
QFN-16
प्याकेजिङ:
ट्रे
कन्फिगरेसन:
एकल
उचाइ:
0.203 mm
लम्बाइ:
3 mm
सञ्चालन आवृत्ति:
DC to 12 GHz
प्रकार:
GaN SiC HEMT
चौडाइ:
3 mm
ब्रान्ड:
कोर्भो
च्यानलहरूको संख्या:
1 Channel
विकास किट:
TGF2977-SMEVB1
नमी संवेदनशील:
हो
उत्पादन प्रकार:
आरएफ JFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
50
उपश्रेणी:
ट्रान्जिस्टरहरू
भाग # उपनाम:
1127257
एकाइ वजन:
0.002014 oz
Tags
TGF297, TGF29, TGF2, TGF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 12 GHz, 25 W, 11 dB, 32 V, GaN, Plastic , QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
भाग # Mfg। विवरण स्टक मूल्य
TGF2979-SM
DISTI # 772-TGF2979-SM		QorvoRF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
RoHS: Compliant		95
  • 1:$62.0000
  • 25:$53.6200
  • 100:$46.3800
TGF2979-SM-EVB
DISTI # 772-TGF2979-SM-EVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
1127378
DISTI # TGF2979-SM		QorvoRF POWER TRANSISTOR
RoHS: Compliant		30
  • 1:$38.2200
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उपलब्धता
स्टक:
90
अर्डर मा:
2073
मात्रा प्रविष्ट गर्नुहोस्:
TGF2979-SM को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६२.००
US$ ६२.००
25
US$ ५३.६२
US$ १ ३४०.५०
100
US$ ४६.३८
US$ ४ ६३८.००
250
US$ ४३.१३
US$ १० ७८२.५०
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