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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| BUZ32 E3045A DISTI # BUZ32E3045A-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BUZ32E3045 | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 470 | |
| BUZ32E3045A | Infineon Technologies AG | RoHS: Not Compliant | 467 |
| छवि | भाग # | विवरण |
|---|---|---|
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Mfr.#: BUZ32 H OMO.#: OMO-BUZ32-H |
MOSFET N-Ch 200V 9.5A TO220-3 |
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Mfr.#: BUZ32 |
MOSFET N-CH 200V 9.5A TO220AB |
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Mfr.#: BUZ325 , MMBZ20VA OMO.#: OMO-BUZ325-MMBZ20VA-1190 |
नयाँ र मौलिक |
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Mfr.#: BUZ326 OMO.#: OMO-BUZ326-1190 |
नयाँ र मौलिक |
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Mfr.#: BUZ32A OMO.#: OMO-BUZ32A-1190 |
नयाँ र मौलिक |
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Mfr.#: BUZ32E3045 OMO.#: OMO-BUZ32E3045-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BUZ32H3045A OMO.#: OMO-BUZ32H3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
|
Mfr.#: BUZ32H3045AATMA1 |
MOSFET N-CH 200V 9.5A TO-263 |
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Mfr.#: BUZ32HXKSA1 OMO.#: OMO-BUZ32HXKSA1-1190 |
- Bulk (Alt: BUZ32HXKSA1) |
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Mfr.#: BUZ32L3045A OMO.#: OMO-BUZ32L3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |