OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

SI4866BDY-T1-GE3

SI4866BDY-T1-GE3
Mfr. #:
SI4866BDY-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 12V 21.5A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4866BDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4866BDY-GE3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
4.45W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
12V
इनपुट-Capacitance-Ciss-Vds
5020pF @ 6V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
21.5A (Tc)
Rds-on-max-Id-Vgs
5.3 mOhm @ 12A, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
80nC @ 4.5V
Pd-शक्ति-डिसिपेशन
2.5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
32 ns 9 ns
उदय-समय
18 ns 12 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
16.1 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
12 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
5.3 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
85 ns 57 ns
सामान्य-टर्न-अन-डिले-समय
26 ns 13 ns
च्यानल-मोड
वृद्धि
Tags
SI4866, SI486, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4866BDY-T1-GE3 N-channel MOSFET Transistor; 21 A; 12 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 12 V 0.0053 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 12V 21.5A 8-Pin SOIC N T/R
***et Europe
Trans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N CH, 12V, 21.5A, SOIC-8
***i-Key
MOSFET N-CH 12V 21.5A 8-SOIC
***Components
TRANS MOSFET N-CH 12V 16.1AN
***
N-CHANNEL 12-V (D-S) MOSFET
***ark
Mosfet, N Channel, 12V, 21.5A, Soic-8; Transistor Polarity:n Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0042Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv Rohs Compliant: No
***nell
MOSFET, N CH, 12V, 21.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:4.45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
भाग # Mfg। विवरण स्टक मूल्य
SI4866BDY-T1-GE3
DISTI # SI4866BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 12V 21.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5527
SI4866BDY-T1-GE3
DISTI # SI4866BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 12V 21.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI4866BDY-T1-GE3
    DISTI # SI4866BDY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 12V 21.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI4866BDY-T1-GE3
      DISTI # SI4866BDY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 12V 16.1A 8-Pin SOIC N T/R (Alt: SI4866BDY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.8589
      • 5000:€0.6159
      • 10000:€0.4999
      • 15000:€0.4419
      • 25000:€0.4229
      SI4866BDY-T1-GE3
      DISTI # 69W7204      		Vishay IntertechnologiesMOSFET, N CHANNEL, 12V, 21.5A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
      • 1:$0.4720
      • 10:$0.4720
      • 25:$0.4720
      • 50:$0.4720
      • 100:$0.4720
      • 250:$0.4720
      • 500:$0.4720
      SI4866BDY-T1-GE3.
      DISTI # 30AC0172      		Vishay IntertechnologiesN-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: NO0
        SI4866BDY-T1-GE3
        DISTI # 70616979        		Vishay SiliconixSI4866BDY-T1-GE3 N-channel MOSFET Transistor,21 A,12 V,8-Pin SOIC
        RoHS: Compliant        		0
        • 100:$1.0000
        • 200:$0.9800
        • 500:$0.9500
        • 1000:$0.9100
        • 2500:$0.8500
        SI4866BDY-T1-GE3
        DISTI # 781-SI4866BDY-T1-GE3        		Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs SO-8
        RoHS: Compliant        		1
        • 1:$1.4900
        • 10:$1.2300
        • 100:$0.9410
        • 500:$0.8090
        • 1000:$0.7110
        • 2500:$0.7100
        SI4866BDY-T1-GE3
        DISTI # 8181309P        		Vishay IntertechnologiesTRANS MOSFET N-CH 12V 16.1AN, RL50
        • 100:£0.6810
        • 500:£0.5850
        • 1500:£0.5300
        • 2500:£0.5190
        SI4866BDY-T1-GE3Vishay BLH 175
        • 4:$1.3125
        • 17:$0.8531
        • 60:$0.4922
        SI4866BDY-T1-GE3Vishay Intertechnologies 140
        • 70:$0.5250
        • 15:$0.8750
        • 1:$1.7500
        SI4866BDY-T1-GE3Vishay Siliconix 8
        • 3:$1.6564
        • 1:$2.0705
        SI4866BDY-T1-GE3
        DISTI # 2478955        		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 21.5A, SOIC, FULL
        RoHS: Compliant        		0
        • 2500:£0.6240
        SI4866BDY-T1-GE3
        DISTI # 2478955        		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 21.5A, SOIC, FULL REEL
        RoHS: Compliant        		0
        • 2500:$0.8750
        SI4866BDY-T1-GE3
        DISTI # 2335321        		Vishay IntertechnologiesMOSFET, N CH, 12V, 21.5A, SOIC
        RoHS: Compliant        		0
        • 1:$2.3700
        • 10:$1.9500
        • 100:$1.5000
        • 500:$1.2900
        • 1000:$1.1300
        • 2500:$1.1300
        SI4866DY-T1-E3Vishay IntertechnologiesMOSFET 12 Volt 11 Amp 3.0W
        RoHS: Compliant        		Americas -
          SI4866BDY-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs SO-8
          RoHS: Compliant          		Americas -
            छवि भाग # विवरण
            SI4866BDY-T1-GE3

            Mfr.#: SI4866BDY-T1-GE3

            OMO.#: OMO-SI4866BDY-T1-GE3

            		 MOSFET 12V Vds 8V Vgs SO-8
            SI4866BDY-T1-E3

            Mfr.#: SI4866BDY-T1-E3

            OMO.#: OMO-SI4866BDY-T1-E3-VISHAY

            		 MOSFET N-CH 12V 21.5A 8-SOIC
            SI4866BDY-T1-GE3

            Mfr.#: SI4866BDY-T1-GE3

            OMO.#: OMO-SI4866BDY-T1-GE3-VISHAY

            		 MOSFET N-CH 12V 21.5A 8-SOIC
            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            1000
            मात्रा प्रविष्ट गर्नुहोस्:
            SI4866BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
            सन्दर्भ मूल्य (USD)
            मात्रा
            एकाइ मूल्य
            विस्तार मूल्य
            1
            US$ ०.७४
            US$ ०.७४
            10
            US$ ०.७०
            US$ ७.०१
            100
            US$ ०.६६
            US$ ६६.४५
            500
            US$ ०.६३
            US$ ३१३.८०
            1000
            US$ ०.५९
            US$ ५९०.६०
            बाट सुरु गर्नुहोस्
            Top