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SI8461DB-T2-E1

SI8461DB-T2-E1
Mfr. #:
SI8461DB-T2-E1
निर्माता:
Vishay
विवरण:
MOSFET P-CH 20V MICROFOOT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI8461DB-T2-E1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8461DB-T2-E1 DatasheetSI8461DB-T2-E1 Datasheet (P4-P6)SI8461DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
4-XFBGA, CSPBGA
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
4-Microfoot
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET P- च्यानल, धातु अक्साइड
पावर-अधिकतम
780mW
ट्रान्जिस्टर-प्रकार
1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
610pF @ 10V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
-
Rds-on-max-Id-Vgs
100 mOhm @ 1.5A, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
24nC @ 8V
Pd-शक्ति-डिसिपेशन
1.8 W
अधिकतम-सञ्चालन-तापमान
+ 85 C
न्यूनतम-सञ्चालन-तापमान
- 40 C
पतन-समय
10 ns
उदय-समय
25 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
- 3.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 20 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
136 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
35 ns
सामान्य-टर्न-अन-डिले-समय
15 ns
Qg-गेट-चार्ज
9.5 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
7 S
Tags
SI8461D, SI8461, SI846, SI84, SI8
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
SI8461DB-T2-E1
DISTI # V72:2272_09216563		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R
RoHS: Compliant		788
  • 75000:$0.2259
  • 30000:$0.2265
  • 15000:$0.2290
  • 6000:$0.2329
  • 3000:$0.2344
  • 1000:$0.2451
  • 500:$0.2655
  • 250:$0.3049
  • 100:$0.3317
  • 50:$0.3570
  • 25:$0.4267
  • 10:$0.4364
  • 1:$0.5067
SI8461DB-T2-E1
DISTI # SI8461DB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2392
SI8461DB-T2-E1
DISTI # SI8461DB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI8461DB-T2-E1
    DISTI # SI8461DB-T2-E1DKR-ND    		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI8461DB-T2-E1
      DISTI # 25790142      		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R
      RoHS: Compliant      		788
      • 500:$0.2655
      • 250:$0.3049
      • 100:$0.3317
      • 50:$0.3570
      • 34:$0.4267
      SI8461DB-T2-E1
      DISTI # 35R6249      		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Product Range:- , RoHS Compliant: Yes0
        SI8461DB-T2-E1
        DISTI # 35R0088        		Vishay IntertechnologiesMOSFET, P-CH, -20V, -3.7A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes0
          SI8461DB-T2-E1.
          DISTI # 15AC0305          		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:780mW,No. of Pins:4Pins , RoHS Compliant: No0
            SI8461DB-T2-E1
            DISTI # 70617007            		Vishay SiliconixSI8461DB-T2-E1 P-channel MOSFET Transistor,3 A,20 V,4-Pin MICRO FOOT
            RoHS: Compliant            		0
            • 300:$0.4500
            • 600:$0.4000
            • 1500:$0.3500
            • 3000:$0.3200
            SI8461DB-T2-E1
            DISTI # 781-SI8461DB-E1            		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs MICRO FOOT 1 x 1
            RoHS: Compliant            		1314
            • 1:$0.6000
            • 10:$0.4790
            • 100:$0.3640
            • 500:$0.3000
            • 1000:$0.2510
            • 3000:$0.2500
            SI8461DB-T2-E1Vishay Siliconix2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET3033
            • 1100:$0.1625
            • 232:$0.1820
            • 1:$0.5200
            SI8461DB-T2-E1Vishay Intertechnologies2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET2400
            • 2223:$0.3150
            • 445:$0.3600
            • 1:$0.9000
            SI8461DBT2E1Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 3000
              SI8461DB-T2-E1Vishay IntertechnologiesINSTOCK1140
                SI8461DB-T2-E1
                DISTI # C1S803601645333                		Vishay IntertechnologiesMOSFETs
                RoHS: Compliant                		788
                • 100:$0.3340
                • 50:$0.3610
                • 25:$0.4286
                • 10:$0.4384
                SI8461DB-T2-E1
                DISTI # 1781671                		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A
                RoHS: Compliant                		0
                • 20:$0.8620
                • 100:$0.7140
                • 500:$0.5590
                • 1000:$0.4600
                • 2500:$0.3910
                • 5000:$0.3700
                SI8461DB-T2-E1
                DISTI # 1781671                		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A
                RoHS: Compliant                		0
                • 3000:£0.2230
                छवि भाग # विवरण
                SI8461DB-T2-E1.

                Mfr.#: SI8461DB-T2-E1.

                OMO.#: OMO-SI8461DB-T2-E1--1190

                		 Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D
                SI8461DB

                Mfr.#: SI8461DB

                OMO.#: OMO-SI8461DB-1190

                		 नयाँ र मौलिक
                SI8461DB-T2-E1

                Mfr.#: SI8461DB-T2-E1

                OMO.#: OMO-SI8461DB-T2-E1-VISHAY

                		 MOSFET P-CH 20V MICROFOOT
                उपलब्धता
                स्टक:
                Available
                अर्डर मा:
                1500
                मात्रा प्रविष्ट गर्नुहोस्:
                SI8461DB-T2-E1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
                सन्दर्भ मूल्य (USD)
                मात्रा
                एकाइ मूल्य
                विस्तार मूल्य
                1
                US$ ०.२४
                US$ ०.२४
                10
                US$ ०.२३
                US$ २.३२
                100
                US$ ०.२२
                US$ २१.९४
                500
                US$ ०.२१
                US$ १०३.६०
                1000
                US$ ०.२०
                US$ १९५.००
                बाट सुरु गर्नुहोस्
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