FMI08N80E

FMI08N80E
Mfr. #:
FMI08N80E
निर्माता:
Fuji Electric Co Ltd
विवरण:
Power Field-Effect Transistor, 28A I(D),500V,0.19ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FMI08N80E डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
FMI0, FMI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
FMI08N80E
DISTI # FE0000000000975
Fuji Electric Co LtdPower Field-Effect Transistor, 28A I(D),500V,0.19ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FMI08N80ESC
    DISTI # FE0000000004516
    Fuji Electric Co LtdMOSFET
    RoHS: Compliant
    0 in Stock0 on Order
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      नयाँ र मौलिक
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      Mfr.#: FMI08N80E

      OMO.#: OMO-FMI08N80E-1190

      Power Field-Effect Transistor, 28A I(D),500V,0.19ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5500
      मात्रा प्रविष्ट गर्नुहोस्:
      FMI08N80E को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      बाट सुरु गर्नुहोस्
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