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A3G22H400-04SR3

A3G22H400-04SR3
Mfr. #:
A3G22H400-04SR3
निर्माता:
NXP Semiconductors
विवरण:
RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A3G22H400-04SR3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
A3G22H400-04SR3 थप जानकारी A3G22H400-04SR3 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
NXP
उत्पादन कोटि:
आरएफ MOSFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर ध्रुवता:
डुअल एन-च्यानल
प्रविधि:
GaN
आईडी - निरन्तर ड्रेन वर्तमान:
29.7 mA
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
पाउनु:
15.3 dB
आउटपुट पावर:
79 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
NI-780S-4
प्याकेजिङ:
रील
सञ्चालन आवृत्ति:
1800 MHz to 2200 MHz
शृङ्खला:
A3G22H400
प्रकार:
आरएफ पावर MOSFET
ब्रान्ड:
NXP अर्धचालक
च्यानलहरूको संख्या:
2 Channel
उत्पादन प्रकार:
आरएफ MOSFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
Vgs - गेट-स्रोत भोल्टेज:
- 8 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
- 2.3 V
भाग # उपनाम:
935370222128
Tags
A3G
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
छवि भाग # विवरण
A3G22H400-04SR3

Mfr.#: A3G22H400-04SR3

OMO.#: OMO-A3G22H400-04SR3

 RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48V
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
A3G22H400-04SR3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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