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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| IPD80N04S306ATMA1 DISTI # IPD80N04S306ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IPD80N04S306ATMA1 DISTI # IPD80N04S306ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD80N04S306ATMA1 DISTI # IPD80N04S306ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 90A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD80N04S306BATMA1 DISTI # IPD80N04S306BATMA1-ND | Infineon Technologies AG | MOSFET N-CHANNEL_30/40V RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IPD80N04S306ATMA1 DISTI # IPD80N04S306ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD80N04S306ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD80N04S306ATMA1 DISTI # SP000261220 | Infineon Technologies AG | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-252 (Alt: SP000261220) RoHS: Compliant Min Qty: 2500 | Europe - 0 |
|
| IPD80N04S306BATMA1 DISTI # IPD80N04S306BATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80N04S306BATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD80N04S3-06 DISTI # 726-IPD80N04S3-06 | Infineon Technologies AG | MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T RoHS: Compliant | 0 | |
| IPD80N04S306ATMA1 DISTI # 726-IPD80N04S306ATMA | Infineon Technologies AG | MOSFET N-CHANNEL_30/40V RoHS: Compliant | 0 | |
| IPD80N04S3-06 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 2050 |
|
| IPD80N04S306ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 14736 |
|
| IPD80N04S3-06 | Texas Instruments | 90 A, 40 V, 0.0052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 949 |
|
| IPD80N04S3-06 | Infineon Technologies AG | 90 A, 40 V, 0.0052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 650 |
|
| IPD80N04S3-06 | Infineon Technologies AG | INSTOCK | 3014 | |
| IPD80N04S3-06B | Infineon Technologies AG | INSTOCK | 7863 |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: IPD80N04S306ATMA1 OMO.#: OMO-IPD80N04S306ATMA1 |
MOSFET N-CHANNEL_30/40V |
|
|
Mfr.#: IPD80N04S3-06 OMO.#: OMO-IPD80N04S3-06 |
MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T |
|
|
Mfr.#: IPD80N06S3-09 OMO.#: OMO-IPD80N06S3-09 |
MOSFET N-Ch 55V 80A DPAK-2 |
|
Mfr.#: IPD80N04S306BATMA1 |
MOSFET N-CHANNEL_30/40V |
|
|
Mfr.#: IPD80N04S3-06QN0406 OMO.#: OMO-IPD80N04S3-06QN0406-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: IPD80N04S3-06 OMO.#: OMO-IPD80N04S3-06-1190 |
MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T |
|
|
Mfr.#: IPD80N04S3-06 QN0406 |
नयाँ र मौलिक |
|
|
Mfr.#: IPD80N04S3-06B OMO.#: OMO-IPD80N04S3-06B-1190 |
नयाँ र मौलिक |
|
Mfr.#: IPD80N04S306ATMA1 |
MOSFET N-CH 40V 90A TO252-3 |
|
|
Mfr.#: IPD80N06S3-09 |
MOSFET N-CH 55V 80A TO252-3 |
