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SIZ900DT-T1-GE3

SIZ900DT-T1-GE3
Mfr. #:
SIZ900DT-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET 2N-CH 30V 24A POWERPAIR
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZ900DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ900DT-T1-GE3 DatasheetSIZ900DT-T1-GE3 Datasheet (P4-P6)SIZ900DT-T1-GE3 Datasheet (P7-P9)SIZ900DT-T1-GE3 Datasheet (P10-P12)SIZ900DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SIZ900DT-GE3
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
6-PowerPair
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
6-PowerPair
कन्फिगरेसन
दोहोरो साझा स्रोत
FET-प्रकार
2 N-Channel (Half Bridge)
पावर-अधिकतम
48W, 100W
ट्रान्जिस्टर-प्रकार
2 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
1830pF @ 15V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
24A, 28A
Rds-on-max-Id-Vgs
7.2 mOhm @ 19.4A, 10V
Vgs-th-max-Id
2.4V @ 250μA
गेट-चार्ज-Qg-Vgs
45nC @ 10V
Pd-शक्ति-डिसिपेशन
48 W 100 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
24 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
5.9 mOhms 3.2 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
SIZ900DT, SIZ900, SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
SIZ900DT-T1-GE3
DISTI # V72:2272_09215430		Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A/28A 8-Pin PowerPAIR T/R
RoHS: Compliant		1355
  • 1000:$0.8356
  • 500:$0.9161
  • 250:$0.9235
  • 100:$1.0261
  • 25:$1.2502
  • 10:$1.2545
  • 1:$1.4462
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		109In Stock
  • 100:$1.4454
  • 10:$1.7990
  • 1:$1.9900
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$0.8420
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SIZ900DT-T1-GE3
    DISTI # 27488534    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A/28A 8-Pin PowerPAIR T/R
    RoHS: Compliant    		1355
    • 1000:$0.8356
    • 500:$0.9161
    • 250:$0.9235
    • 100:$1.0261
    • 25:$1.2502
    • 10:$1.2545
    • 9:$1.4462
    SIZ900DT-T1-GE3
    DISTI # 91T5914    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 24A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0059ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:48W, RoHS Compliant: Yes0
    • 1:$1.7700
    • 25:$1.4700
    • 50:$1.3100
    • 100:$1.1400
    • 250:$1.0700
    • 500:$0.9930
    • 1000:$0.9450
    SIZ900DT-T1-GE3
    DISTI # 78-SIZ900DT-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		3040
    • 1:$1.7700
    • 10:$1.4700
    • 100:$1.1400
    • 500:$0.9930
    • 1000:$0.9450
    SIZ900DT-T1-GE3
    DISTI # C1S803602095429    		Vishay IntertechnologiesMOSFETs1355
    • 250:$0.9235
    • 100:$1.0261
    • 25:$1.2502
    • 10:$1.2545
    SIZ900DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		Americas -
      छवि भाग # विवरण
      SIZ900DP

      Mfr.#: SIZ900DP

      OMO.#: OMO-SIZ900DP-1190

      		 नयाँ र मौलिक
      SIZ900DP-T1-GE3

      Mfr.#: SIZ900DP-T1-GE3

      OMO.#: OMO-SIZ900DP-T1-GE3-1190

      		 नयाँ र मौलिक
      SIZ900DT

      Mfr.#: SIZ900DT

      OMO.#: OMO-SIZ900DT-1190

      		 नयाँ र मौलिक
      SIZ900DT-T1-E3

      Mfr.#: SIZ900DT-T1-E3

      OMO.#: OMO-SIZ900DT-T1-E3-1190

      		 नयाँ र मौलिक
      SIZ900DT-T1-GE3

      Mfr.#: SIZ900DT-T1-GE3

      OMO.#: OMO-SIZ900DT-T1-GE3-VISHAY

      		 MOSFET 2N-CH 30V 24A POWERPAIR
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5500
      मात्रा प्रविष्ट गर्नुहोस्:
      SIZ900DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.०२
      US$ १.०२
      10
      US$ ०.९७
      US$ ९.६९
      100
      US$ ०.९२
      US$ ९१.७७
      500
      US$ ०.८७
      US$ ४३३.३५
      1000
      US$ ०.८२
      US$ ८१५.८०
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
      बाट सुरु गर्नुहोस्
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