A2I35H060GNR1

A2I35H060GNR1
Mfr. #:
A2I35H060GNR1
निर्माता:
NXP Semiconductors
विवरण:
RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A2I35H060GNR1 डाटा पाना
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थप जानकारी:
A2I35H060GNR1 थप जानकारी A2I35H060GNR1 Product Details
उत्पादन विशेषता
विशेषता मान
Tags
A2I35H06, A2I35H, A2I3, A2I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Semiconductors SCT
Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V, FM17F
***W
Amplifier,3400 to 3800 MHz, 48 W, Typ Gain in dB is 24 @ 3500 MHz, 28 V, LDMOS, SOT1730
***et Europe
Power Amp Dual 3800MHz 24.6dB 17-Pin TO-270WBG T/R
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
भाग # Mfg। विवरण स्टक मूल्य
A2I35H060GNR1
DISTI # A2I35H060GNR1-ND
NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Not compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$44.0038
A2I35H060GNR1
DISTI # A2I35H060GNR1
NXP SemiconductorsPower Amp Dual 3800MHz 24.6dB 17-Pin TO-270WBG T/R - Tape and Reel (Alt: A2I35H060GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$43.7900
  • 1000:$42.0900
  • 2000:$40.3900
  • 3000:$38.9900
  • 5000:$38.1900
A2I35H060GNR1
DISTI # 841-A2I35H060GNR1
NXP SemiconductorsRF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
RoHS: Compliant
0
  • 500:$44.0100
A2I35H060GNR1
DISTI # A2I35H060GNR1
NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant
490
  • 1:$51.7800
  • 10:$47.8500
  • 25:$46.4400
छवि भाग # विवरण
A2I35H060GNR1

Mfr.#: A2I35H060GNR1

OMO.#: OMO-A2I35H060GNR1

RF Amplifier A2I35H060GN/FM17F///REEL 13 Q2 DP
A2I35H060NR1

Mfr.#: A2I35H060NR1

OMO.#: OMO-A2I35H060NR1

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
A2I35H060GNR1

Mfr.#: A2I35H060GNR1

OMO.#: OMO-A2I35H060GNR1-NXP-SEMICONDUCTORS

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
A2I35H020NR1

Mfr.#: A2I35H020NR1

OMO.#: OMO-A2I35H020NR1-1190

नयाँ र मौलिक
A2I35H060N

Mfr.#: A2I35H060N

OMO.#: OMO-A2I35H060N-1190

नयाँ र मौलिक
A2I35H060NR1

Mfr.#: A2I35H060NR1

OMO.#: OMO-A2I35H060NR1-NXP-SEMICONDUCTORS

AIRFAST RF LDMOS WIDEBAND INTEGR
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
A2I35H060GNR1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५७.२८
US$ ५७.२८
10
US$ ५४.४२
US$ ५४४.२१
100
US$ ५१.५६
US$ ५ १५५.६५
500
US$ ४८.६९
US$ २४ ३४६.१५
1000
US$ ४५.८३
US$ ४५ ८२८.००
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