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FDFME3N311ZT

FDFME3N311ZT
Mfr. #:
FDFME3N311ZT
निर्माता:
ON Semiconductor
विवरण:
MOSFET N-CH 30V 1.8A 6MICROFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDFME3N311ZT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
फेयरचाइल्ड
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
एकाइ - वजन
0.000889 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
microFET-6
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
Schottky डायोड संग एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
1.1 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
2.8 ns
उदय-समय
16 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
1.6 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
299 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
35 ns
सामान्य-टर्न-अन-डिले-समय
12 ns
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
2.8 S
च्यानल-मोड
वृद्धि
Tags
FDFME, FDFM, FDF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
भाग # Mfg। विवरण स्टक मूल्य
FDFME3N311ZT
DISTI # FDFME3N311ZTTR-ND		ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$0.2525
FDFME3N311ZT
DISTI # FDFME3N311ZTCT-ND		ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDFME3N311ZT
    DISTI # FDFME3N311ZTDKR-ND    		ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDFME3N311ZT
      DISTI # FDFME3N311ZT      		ON SemiconductorTrans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel      		Europe - 0
      • 5000:€0.4469
      • 10000:€0.3479
      • 20000:€0.2889
      • 30000:€0.2429
      • 50000:€0.2249
      FDFME3N311ZT
      DISTI # 73R3644      		ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes0
      • 1:$0.6400
      • 25:$0.5270
      • 50:$0.4340
      • 100:$0.3400
      • 250:$0.3170
      • 500:$0.2950
      • 1000:$0.2720
      FDFME3N311ZT
      DISTI # 64R3000      		ON SemiconductorMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
      • 1:$0.2860
      • 5000:$0.2840
      • 10000:$0.2500
      • 25000:$0.2250
      • 50000:$0.2130
      FDFME3N311ZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		60662
      • 1000:$0.2500
      • 500:$0.2600
      • 100:$0.2700
      • 25:$0.2900
      • 1:$0.3100
      FDFME3N311ZT
      DISTI # 1813536      		ON SemiconductorMOSFET Transistor
      RoHS: Compliant      		0
      • 5000:£0.2410
      FDFME3N311ZT
      DISTI # 1813536      		ON SemiconductorMOSFET Transistor
      RoHS: Compliant      		0
      • 5000:$0.9780
      छवि भाग # विवरण
      FDFME3N311ZT

      Mfr.#: FDFME3N311ZT

      OMO.#: OMO-FDFME3N311ZT

      		 MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode
      FDFME3N311ZT

      Mfr.#: FDFME3N311ZT

      OMO.#: OMO-FDFME3N311ZT-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 1.8A 6MICROFET
      FDFME3N311ZT/1T

      Mfr.#: FDFME3N311ZT/1T

      OMO.#: OMO-FDFME3N311ZT-1T-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      FDFME3N311ZT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.३२
      US$ ०.३२
      10
      US$ ०.३०
      US$ ३.०४
      100
      US$ ०.२९
      US$ २८.७६
      500
      US$ ०.२७
      US$ १३५.८०
      1000
      US$ ०.२६
      US$ २५५.६०
      बाट सुरु गर्नुहोस्
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