IPL60R1K5C6SATMA1

IPL60R1K5C6SATMA1
Mfr. #:
IPL60R1K5C6SATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 8TSON
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPL60R1K5C6SATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPL60R1K5C6SATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
इन्फिनोन
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
XPL60R1
प्याकेजिङ
रील
अंश-उपनामहरू
IPL60R1K5C6S SP001163010
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
CoolMOS
प्याकेज-केस
SON-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
26.6 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 40 C
पतन-समय
20 ns
उदय-समय
7 ns
Vgs-गेट-स्रोत-भोल्टेज
30 V
आईडी-निरन्तर-नाली-वर्तमान
3 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
650 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
3 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
1.5 Ohms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
40 ns
सामान्य-टर्न-अन-डिले-समय
8 ns
Qg-गेट-चार्ज
9.4 nC
Tags
IPL60R1, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R
***ark
Mosfet, N-Ch, 600V, 3A, Smd; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.35Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPL60R1K5C6SATMA1
DISTI # V72:2272_06384719
Infineon Technologies AGTrans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R10000
  • 6000:$0.3851
  • 3000:$0.4122
  • 1000:$0.4167
  • 500:$0.5330
  • 250:$0.6076
  • 100:$0.6139
  • 25:$0.8058
  • 10:$0.8955
  • 1:$1.0560
IPL60R1K5C6SATMA1
DISTI # V36:1790_06384719
Infineon Technologies AGTrans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R0
  • 5000000:$0.3585
  • 2500000:$0.3587
  • 500000:$0.3770
  • 50000:$0.4080
  • 5000:$0.4131
IPL60R1K5C6SATMA1
DISTI # IPL60R1K5C6SATMA1-ND
Infineon Technologies AGMOSFET N-CH 8TSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.4131
IPL60R1K5C6SATMA1
DISTI # 26195555
Infineon Technologies AGTrans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R10000
  • 17:$1.0560
IPL60R1K5C6SATMA1
DISTI # 33792082
Infineon Technologies AGTrans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R5000
  • 5000:$0.3705
IPL60R1K5C6SATMA1
DISTI # IPL60R1K5C6SATMA1
Infineon Technologies AGTrans MOSFET N-CH 650V 3A 5-Pin TPAK T/R - Tape and Reel (Alt: IPL60R1K5C6SATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3749
  • 30000:$0.3819
  • 20000:$0.3949
  • 10000:$0.4099
  • 5000:$0.4259
IPL60R1K5C6SATMA1
DISTI # SP001163010
Infineon Technologies AGTrans MOSFET N-CH 650V 3A 5-Pin TPAK T/R (Alt: SP001163010)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.3509
  • 30000:€0.3779
  • 20000:€0.4099
  • 10000:€0.4469
  • 5000:€0.5469
IPL60R1K5C6SATMA1
DISTI # 57AC2279
Infineon Technologies AGMOSFET, N-CH, 600V, 3A, SMD,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.35ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes4385
  • 1000:$0.4480
  • 500:$0.5690
  • 250:$0.6050
  • 100:$0.6420
  • 50:$0.7070
  • 25:$0.7720
  • 10:$0.8370
  • 1:$0.9800
IPL60R1K5C6SATMA1
DISTI # 726-IPL60R1K5C6SATMA
Infineon Technologies AGMOSFET N-Ch 650V 3A ThinPAK 5x6
RoHS: Compliant
3079
  • 1:$0.9700
  • 10:$0.8290
  • 100:$0.6360
  • 500:$0.5630
  • 1000:$0.4440
  • 5000:$0.3940
  • 10000:$0.3790
IPL60R1K5C6SATMA1
DISTI # 2860247
Infineon Technologies AGMOSFET, N-CH, 600V, 3A, SMD
RoHS: Compliant
4385
  • 1000:$0.6300
  • 500:$0.6660
  • 250:$0.7700
  • 100:$0.9090
  • 10:$1.1200
  • 1:$1.2800
IPL60R1K5C6SATMA1
DISTI # 2860247
Infineon Technologies AGMOSFET, N-CH, 600V, 3A, SMD4400
  • 100:£0.5760
  • 10:£0.8170
  • 1:£1.0000
छवि भाग # विवरण
IPL60R1K5C6SATMA1

Mfr.#: IPL60R1K5C6SATMA1

OMO.#: OMO-IPL60R1K5C6SATMA1

MOSFET N-Ch 650V 3A ThinPAK 5x6
IPL60R1K5C6SATMA1

Mfr.#: IPL60R1K5C6SATMA1

OMO.#: OMO-IPL60R1K5C6SATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 8TSON
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
IPL60R1K5C6SATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.५४
US$ ०.५४
10
US$ ०.५१
US$ ५.११
100
US$ ०.४८
US$ ४८.४०
500
US$ ०.४६
US$ २२८.५५
1000
US$ ०.४३
US$ ४३०.२०
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