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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SIS410DN-T1-GE3 DISTI # V36:1790_09216084 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 |
|
| SIS410DN-T1-GE3 DISTI # V72:2272_09216084 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 | |
| SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 161825In Stock |
|
| SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 161825In Stock |
|
| SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 159000In Stock |
|
| SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R (Alt: SIS410DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SIS410DN-T1-GE3 DISTI # SIS410DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS410DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIS410DN-T1-GE3 DISTI # 08R0706 | Vishay Intertechnologies | MOSFET, N CH, 20V, 35A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W RoHS Compliant: Yes | 0 |
|
| SIS410DN-T1-GE3 DISTI # 05W6932 | Vishay Intertechnologies | MOSFET, N CHANNEL, 20V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes | 0 |
|
| SIS410DN-T1-GE3 DISTI # 55R1905 | Vishay Intertechnologies | MOSFET, N-CH, 20V, 35A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):4mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:5.2W,Operating RoHS Compliant: Yes | 1220 |
|
| SIS410DN-T1-GE3 DISTI # 781-SIS410DN-T1-GE3 | Vishay Intertechnologies | MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 7753 |
|
| SIS410DN-T1-GE3 DISTI # 1779235 | Vishay Intertechnologies | MOSFET, N-CH, 20V, 35A, POWERPAK8 RoHS: Compliant | 1221 |
|
| SIS410DN-T1-GE3 DISTI # 1779235 | Vishay Intertechnologies | MOSFET, N-CH, 20V, 35A, POWERPAK8 | 1426 |
|
| SIS410DNT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SIS410DN-T1-GE3 | Vishay Intertechnologies | MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 | Americas - 6000 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SIS488DN-T1-GE3 OMO.#: OMO-SIS488DN-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SIS434DN-GE3 |
|
|
Mfr.#: SIS427EDN-T1-GE3 OMO.#: OMO-SIS427EDN-T1-GE3 |
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 |
|
Mfr.#: SIS444DN-T1-GE3 OMO.#: OMO-SIS444DN-T1-GE3-VISHAY |
IGBT Transistors MOSFET N-Channel 30V |
|
Mfr.#: SIS407ADN-T1-GE3 OMO.#: OMO-SIS407ADN-T1-GE3-VISHAY |
IGBT Transistors MOSFET -20V 9mOhms@-4.5V -18A P-Ch |
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Mfr.#: SIS406DN-T1-GE3 OMO.#: OMO-SIS406DN-T1-GE3-VISHAY |
MOSFET N-CH 30V 9A 1212-8 PPAK |
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Mfr.#: SIS413DN-T1-GE3 OMO.#: OMO-SIS413DN-T1-GE3-VISHAY |
MOSFET P-CH 30V 18A PPAK 1212-8 |
|
Mfr.#: SIS452DN-T1-E3 OMO.#: OMO-SIS452DN-T1-E3-1190 |
नयाँ र मौलिक |
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Mfr.#: SIS472ADN-T1-GE OMO.#: OMO-SIS472ADN-T1-GE-1190 |
नयाँ र मौलिक |
|
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Mfr.#: SIS472DN-T1-GE3 OMO.#: OMO-SIS472DN-T1-GE3-VISHAY |
MOSFET N-CH 30V 20A 1212-8 |
|
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Mfr.#: SIS488DN-T1-E3 OMO.#: OMO-SIS488DN-T1-E3-1190 |
नयाँ र मौलिक |