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IKQ50N120CT2XKSA1

IKQ50N120CT2XKSA1
Mfr. #:
IKQ50N120CT2XKSA1
निर्माता:
Infineon Technologies
विवरण:
IGBT 1200V 100A TO247-3-46
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IKQ50N120CT2XKSA1 डाटा पाना
डेलिभरी:
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उत्पादन विशेषता
विशेषता मान
Tags
IKQ5, IKQ
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ50N120CT2XKSA1 P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 1200V 50A 1,75V TO247-3
***i-Key
IGBT 1200V 100A TO247-3-46
***et
IGBT PRODUCTS
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 100A, 652W, TO-247; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 100A, 652W, TO-247; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:652W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Motor control; Industrial drives; Other low speed hard switching applications (f sw <20kHz)
भाग # Mfg। विवरण स्टक मूल्य
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2XKSA1-ND		Infineon Technologies AGIGBT 1200V 100A TO247-3-46
RoHS: Compliant
Min Qty: 1
Container: Tube		146In Stock
  • 720:$8.4663
  • 240:$9.5173
  • 25:$10.8020
  • 10:$11.2690
  • 1:$12.2600
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2XKSA1		Infineon Technologies AGIGBTs - Rail/Tube (Alt: IKQ50N120CT2XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$6.9900
  • 1440:$7.0900
  • 960:$7.3900
  • 480:$7.6900
  • 240:$7.9900
IKQ50N120CT2XKSA1
DISTI # SP001272736		Infineon Technologies AGIGBTs (Alt: SP001272736)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.7900
  • 500:€6.1900
  • 100:€6.3900
  • 50:€6.6900
  • 25:€6.8900
  • 10:€7.1900
  • 1:€7.8900
IKQ50N120CT2XKSA1
DISTI # 93AC7070		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes173
  • 500:$8.1400
  • 250:$8.7000
  • 100:$9.1500
  • 50:$9.7700
  • 25:$10.3800
  • 10:$10.8400
  • 1:$11.7900
IKQ50N120CT2XKSA1
DISTI # 726-IKQ50N120CT2XKSA		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		442
  • 1:$11.6700
  • 10:$10.7300
  • 25:$10.2800
  • 100:$9.0600
  • 250:$8.6100
  • 500:$8.0600
IKQ50N120CT2XKSA1
DISTI # 1623284		Infineon Technologies AGIGBT 1200V 50A TRENCHSTOP2 DIODE TO-247, TU194
  • 600:£5.7910
  • 300:£6.2050
  • 150:£6.6820
  • 30:£7.2390
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2		Infineon Technologies AGTransistor: IGBT,1.2kV,50A,151W,TO247-3477
  • 30:$8.6000
  • 10:$9.2200
  • 3:$10.2600
  • 1:$11.6100
IKQ50N120CT2XKSA1
DISTI # 2986435		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247165
  • 100:£6.5600
  • 50:£7.0100
  • 10:£7.4600
  • 5:£8.4500
  • 1:£8.9700
IKQ50N120CT2XKSA1
DISTI # 2986435		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant		163
  • 250:$10.4900
  • 100:$10.5900
  • 50:$11.8100
  • 10:$12.6300
  • 5:$13.1000
  • 1:$13.5900
छवि भाग # विवरण
IKQ50N120CT2XKSA1

Mfr.#: IKQ50N120CT2XKSA1

OMO.#: OMO-IKQ50N120CT2XKSA1

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OMO.#: OMO-IKQ50N120CH3XKSA1

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Mfr.#: IKQ50N120CH3

OMO.#: OMO-IKQ50N120CH3-1190

 नयाँ र मौलिक
IKQ50N120CH3XKSA1

Mfr.#: IKQ50N120CH3XKSA1

OMO.#: OMO-IKQ50N120CH3XKSA1-INFINEON-TECHNOLOGIES

 IGBT HS SW 1200V 50A TO-247-3
IKQ50N120CT2

Mfr.#: IKQ50N120CT2

OMO.#: OMO-IKQ50N120CT2-1190

 IGBT 1200V 50A 1,75V TO247-3
IKQ50N120CT2XKSA1

Mfr.#: IKQ50N120CT2XKSA1

OMO.#: OMO-IKQ50N120CT2XKSA1-INFINEON-TECHNOLOGIES

 IGBT 1200V 100A TO247-3-46
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
IKQ50N120CT2XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ९.८७
US$ ९.८७
10
US$ ९.३८
US$ ९३.७६
100
US$ ८.८८
US$ ८८८.२४
500
US$ ८.३९
US$ ४ १९४.४५
1000
US$ ७.९०
US$ ७ ८९५.५०
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