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SIHF12N50C-E3

SIHF12N50C-E3
Mfr. #:
SIHF12N50C-E3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET N-Channel 500V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHF12N50C-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHF12N50C-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
शृङ्खला
E
प्याकेजिङ
रील
एकाइ - वजन
0.211644 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-220-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
36 W
अधिकतम-सञ्चालन-तापमान
+ 125 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
30 V
आईडी-निरन्तर-नाली-वर्तमान
12 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
500 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
460 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
32 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
3 S
Tags
SIHF12N, SIHF12, SIHF1, SIHF, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SIHF12N50C-E3
DISTI # SIHF12N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 12A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.9106
SIHF12N50C-E3
DISTI # SIHF12N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHF12N50C-E3
DISTI # 781-SIHF12N50C-E3		Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		0
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2500:$2.5200
SIHF12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		Americas -
    छवि भाग # विवरण
    SIHF12N50C-E3

    Mfr.#: SIHF12N50C-E3

    OMO.#: OMO-SIHF12N50C-E3

    		 MOSFET N-Channel 500V
    SIHF12N65E-GE3

    Mfr.#: SIHF12N65E-GE3

    OMO.#: OMO-SIHF12N65E-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N60E-E3

    Mfr.#: SIHF12N60E-E3

    OMO.#: OMO-SIHF12N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N60E-GE3

    Mfr.#: SIHF12N60E-GE3

    OMO.#: OMO-SIHF12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    SIHF12N50C-E3

    Mfr.#: SIHF12N50C-E3

    OMO.#: OMO-SIHF12N50C-E3-VISHAY

    		 RF Bipolar Transistors MOSFET N-Channel 500V
    SIHF122N50C-E3

    Mfr.#: SIHF122N50C-E3

    OMO.#: OMO-SIHF122N50C-E3-1190

    		 नयाँ र मौलिक
    SIHF12N60E

    Mfr.#: SIHF12N60E

    OMO.#: OMO-SIHF12N60E-1190

    		 नयाँ र मौलिक
    SIHF12N60E-E3

    Mfr.#: SIHF12N60E-E3

    OMO.#: OMO-SIHF12N60E-E3-VISHAY

    		 MOSFET N-CH 600V 12A TO220 FULLP
    SIHF12N60EGE3

    Mfr.#: SIHF12N60EGE3

    OMO.#: OMO-SIHF12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    SIHF12N65E

    Mfr.#: SIHF12N65E

    OMO.#: OMO-SIHF12N65E-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    2500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHF12N50C-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.५८
    US$ ३.५८
    10
    US$ ३.४१
    US$ ३४.०६
    100
    US$ ३.२३
    US$ ३२२.६५
    500
    US$ ३.०५
    US$ १ ५२३.६५
    1000
    US$ २.८७
    US$ २ ८६८.००
    बाट सुरु गर्नुहोस्
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