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IRF9953PBF

IRF9953PBF
Mfr. #:
IRF9953PBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET 2P-CH 30V 2.3A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF9953PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
FETs - arrays
शृङ्खला
HEXFETR
प्याकेजिङ
ट्यूब वैकल्पिक प्याकेजिङ
एकाइ - वजन
0.019048 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 P-Channel (Dual)
पावर-अधिकतम
2W
ट्रान्जिस्टर-प्रकार
2 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
190pF @ 15V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
2.3A
Rds-on-max-Id-Vgs
250 mOhm @ 1A, 10V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
12nC @ 10V
Pd-शक्ति-डिसिपेशन
2 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
6.9 ns
उदय-समय
14 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
- 2.3 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
250 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
20 ns
सामान्य-टर्न-अन-डिले-समय
9.7 ns
Qg-गेट-चार्ज
6.9 nC
च्यानल-मोड
वृद्धि
Tags
IRF9953, IRF995, IRF99, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V
***ure Electronics
IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET
***ernational Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC
***Components
MOSFET P-Channel 30V 2.3A SOIC8
***i-Key
MOSFET 2P-CH 30V 2.3A 8-SOIC
***ronik
2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm
***ment14 APAC
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
भाग # Mfg। विवरण स्टक मूल्य
IRF9953TRPBF
DISTI # IRF9953PBFCT-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953TRPBF
DISTI # IRF9953PBFDKR-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2738In Stock
  • 1000:$0.4143
  • 500:$0.5079
  • 100:$0.6715
  • 10:$0.8580
  • 1:$0.9700
IRF9953PBF
DISTI # IRF9953PBF-ND		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF9953TRPBF
    DISTI # IRF9953PBFTR-ND    		Infineon Technologies AGMOSFET 2P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 4000:$0.3683
    IRF9953PBF-EL
    DISTI # IRF9953PBF-EL    		Infineon Technologies AGTrans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL)
    RoHS: Compliant
    Min Qty: 95
    Container: Tube    		Europe - 0
      IRF9953PBF
      DISTI # 97K2255      		Infineon Technologies AGMOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes0
        IRF9953PBF
        DISTI # 942-IRF9953PBF        		Infineon Technologies AGMOSFET DUAL -30V P-CH 20V VGS MAX
        RoHS: Compliant        		0
          IRF9953PBFInternational RectifierINSTOCK130
            IRF9953PBF
            DISTI # 9102230            		Infineon Technologies AGMOSFET, DUAL, PP, LOGIC, SO-8
            RoHS: Compliant            		0
            • 1:$1.4400
            • 10:$1.1800
            • 100:$0.9280
            • 1000:$0.7800
            • 2000:$0.6870
            छवि भाग # विवरण
            IRF9953TRPBF

            Mfr.#: IRF9953TRPBF

            OMO.#: OMO-IRF9953TRPBF

            		 MOSFET MOSFT DUAL PCh -30V 2.3A
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF

            		 MOSFET AUTO HEXFET SO-8
            IRF9910TR

            Mfr.#: IRF9910TR

            OMO.#: OMO-IRF9910TR-INFINEON-TECHNOLOGIES

            		 MOSFET 2N-CH 20V 10A 8-SOIC
            IRF9956PBF

            Mfr.#: IRF9956PBF

            OMO.#: OMO-IRF9956PBF-INFINEON-TECHNOLOGIES

            		 MOSFET 2N-CH 30V 3.5A 8-SOIC
            IRF9910PBF-1

            Mfr.#: IRF9910PBF-1

            OMO.#: OMO-IRF9910PBF-1-1190

            		 नयाँ र मौलिक
            IRF9952

            Mfr.#: IRF9952

            OMO.#: OMO-IRF9952-INFINEON-TECHNOLOGIES

            		 MOSFET N/P-CH 30V 8-SOIC
            IRF9952Q

            Mfr.#: IRF9952Q

            OMO.#: OMO-IRF9952Q-1190

            		 नयाँ र मौलिक
            IRF9952QTRPBF

            Mfr.#: IRF9952QTRPBF

            OMO.#: OMO-IRF9952QTRPBF-INFINEON-TECHNOLOGIES

            		 MOSFET N/P-CH 30V 8-SOIC
            IRF9953TR

            Mfr.#: IRF9953TR

            OMO.#: OMO-IRF9953TR-INFINEON-TECHNOLOGIES

            		 MOSFET 2P-CH 30V 2.3A 8-SOIC
            IRF9953TRPBF

            Mfr.#: IRF9953TRPBF

            OMO.#: OMO-IRF9953TRPBF-INFINEON-TECHNOLOGIES

            		 नयाँ र मौलिक
            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            2500
            मात्रा प्रविष्ट गर्नुहोस्:
            IRF9953PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
            सन्दर्भ मूल्य (USD)
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            विस्तार मूल्य
            1
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