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SI4670DY-T1-E3

SI4670DY-T1-E3
Mfr. #:
SI4670DY-T1-E3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4670DY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4670DY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4670DY-E3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
Schottky डायोड संग दोहोरो
FET-प्रकार
2 N-Channel (Dual)
पावर-अधिकतम
2.8W
ट्रान्जिस्टर-प्रकार
2 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
25V
इनपुट-Capacitance-Ciss-Vds
680pF @ 13V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
8A
Rds-on-max-Id-Vgs
23 mOhm @ 7A, 10V
Vgs-th-max-Id
2.2V @ 250μA
गेट-चार्ज-Qg-Vgs
18nC @ 10V
Pd-शक्ति-डिसिपेशन
1.8 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
50 ns
उदय-समय
50 ns
Vgs-गेट-स्रोत-भोल्टेज
16 V
आईडी-निरन्तर-नाली-वर्तमान
7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
25 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
23 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
20 ns
सामान्य-टर्न-अन-डिले-समय
15 ns
च्यानल-मोड
वृद्धि
Tags
SI4670DY-T1-E, SI4670DY-T, SI4670D, SI4670, SI467, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-Channel 25V 7A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 25V 8A 8SOIC
***ronik
DUAL 25V 8A 23mOhm SO-8
***
DUAL N-CH 30V MSFT W/SCHOTTKY
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI4670DY-T1-E3
DISTI # SI4670DY-T1-E3TR-ND		Vishay SiliconixMOSFET 2N-CH 25V 8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5236
SI4670DY-T1-E3
DISTI # SI4670DY-T1-E3CT-ND		Vishay SiliconixMOSFET 2N-CH 25V 8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI4670DY-T1-E3
DISTI # SI4670DY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2N-CH 25V 8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI4670DY-T1-E3
DISTI # SI4670DY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4670DY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4939
  • 5000:$0.4799
  • 10000:$0.4599
  • 15000:$0.4469
  • 25000:$0.4349
SI4670DY-T1-E3
DISTI # 781-SI4670DY-E3		Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs SO-8
RoHS: Compliant		0
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5680
  • 2500:$0.5670
छवि भाग # विवरण
SI4670DY-T1-E3

Mfr.#: SI4670DY-T1-E3

OMO.#: OMO-SI4670DY-T1-E3

 MOSFET 25V Vds 16V Vgs SO-8
SI4670DY-T1-GE3

Mfr.#: SI4670DY-T1-GE3

OMO.#: OMO-SI4670DY-T1-GE3

 MOSFET 25V Vds 16V Vgs SO-8
SI4670DY-T1-GE3

Mfr.#: SI4670DY-T1-GE3

OMO.#: OMO-SI4670DY-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET Dual N-ChW/ Schottky 25V 23mohms @ 10V
SI4670DY-T1-E3

Mfr.#: SI4670DY-T1-E3

OMO.#: OMO-SI4670DY-T1-E3-VISHAY

 RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
SI4670DY

Mfr.#: SI4670DY

OMO.#: OMO-SI4670DY-1190

 नयाँ र मौलिक
SI4670DY-T1-E3-S

Mfr.#: SI4670DY-T1-E3-S

OMO.#: OMO-SI4670DY-T1-E3-S-1190

 नयाँ र मौलिक
SI4670DY-T1-E3..

Mfr.#: SI4670DY-T1-E3..

OMO.#: OMO-SI4670DY-T1-E3--1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
SI4670DY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.६५
US$ ०.६५
10
US$ ०.६२
US$ ६.२०
100
US$ ०.५९
US$ ५८.७१
500
US$ ०.५५
US$ २७७.२५
1000
US$ ०.५२
US$ ५२१.९०
बाट सुरु गर्नुहोस्
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