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SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3
Mfr. #:
SIHJ10N60E-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 600V 10A POWERPAKSO
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHJ10N60E-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHJ10N60E-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 600V 10A 8-Pin PowerPAK SO T/R
***ure Electronics
600Volt, 10Amp, 360mohm, PPAKSO-8
***ark
Mosfet, N-Ch, 600V, 10A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.313Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHJ10N60E-T1-GE3
DISTI # V72:2272_17600390		Vishay IntertechnologiesSIHJ10N60E-T1-GE3**MULT1
9172
3106950		2705
  • 1000:$1.3580
  • 500:$1.6170
  • 250:$1.8610
  • 100:$1.8720
  • 50:$2.2780
  • 25:$2.4120
  • 10:$2.4140
  • 1:$3.1823
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 10A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Tube		1709In Stock
  • 6000:$1.2886
  • 3000:$1.3381
  • 500:$1.7346
  • 100:$2.1113
  • 25:$2.4780
  • 10:$2.6270
  • 1:$2.9200
SIHJ10N60E-T1-GE3
DISTI # 29528986		Vishay IntertechnologiesSIHJ10N60E-T1-GE3**MULT1
9172
3106950		2705
  • 6:$3.1823
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 10A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ10N60E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 600V 10A 8-Pin PowerPAK SO T/R (Alt: SIHJ10N60E-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.4900
  • 10:€1.7900
  • 1:€2.5900
SIHJ10N60E-T1-GE3
DISTI # 20AC3838		Vishay IntertechnologiesN-CHANNEL 600V0
  • 10000:$1.1800
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIHJ10N60E-T1-GE3
DISTI # 78-SIHJ10N60E-T1-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant		3336
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
  • 3000:$1.2700
  • 6000:$1.2200
SIHJ10N60E-T1-GE3
DISTI # 2708303		Vishay IntertechnologiesMOSFET, N-CH, 600V, 10A, POWERPAK SO2910
  • 500:£1.1400
  • 250:£1.2200
  • 100:£1.3000
  • 10:£1.6700
  • 1:£2.2900
SIHJ10N60E-T1-GE3
DISTI # 2708303		Vishay IntertechnologiesMOSFET, N-CH, 600V, 10A, POWERPAK SO
RoHS: Compliant		2920
  • 6000:$2.0000
  • 3000:$2.0200
  • 500:$2.6200
  • 100:$3.1900
  • 25:$3.7400
  • 10:$3.9600
  • 1:$4.4000
छवि भाग # विवरण
SIHJ10N60E-T1-GE3

Mfr.#: SIHJ10N60E-T1-GE3

OMO.#: OMO-SIHJ10N60E-T1-GE3

 MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
SIHJ10N60E-T1-GE3

Mfr.#: SIHJ10N60E-T1-GE3

OMO.#: OMO-SIHJ10N60E-T1-GE3-VISHAY

 MOSFET N-CH 600V 10A POWERPAKSO
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
SIHJ10N60E-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.००
US$ ०.००
10
US$ ०.००
US$ ०.००
100
US$ ०.००
US$ ०.००
500
US$ ०.००
US$ ०.००
1000
US$ ०.००
US$ ०.००
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