CGH55030F2

CGH55030F2
Mfr. #:
CGH55030F2
निर्माता:
N/A
विवरण:
RF MOSFET HEMT 28V 440166
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
CGH55030F2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
CGH55030F2 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
वुल्फस्पीड / क्री
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
ट्रे
माउन्टिङ-शैली
पेंच
सञ्चालन-तापमान-दायरा
-
प्याकेज-केस
440166
प्रविधि
GaN SiC
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
HEMT
पाउनु
12 dB
कक्षा
-
आउटपुट-पावर
25 W
Pd-शक्ति-डिसिपेशन
-
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 40 C
आवेदन
-
सञ्चालन - आवृत्ति
4.5 GHz to 6 GHz
आईडी-निरन्तर-नाली-वर्तमान
3 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
120 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
- 3 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
-
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
-
Vgs-गेट-स्रोत-ब्रेकडाउन-भोल्टेज
- 10 V to + 2 V
गेट-स्रोत-कट-अफ-भोल्टेज
-
अधिकतम-नाली-गेट-भोल्टेज
-
NF-शोर-चित्र
-
P1dB-संकुचन-बिन्दु
-
Tags
CGH55030F2, CGH55030F, CGH5503, CGH55, CGH5, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440166
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
भाग # Mfg। विवरण स्टक मूल्य
CGH55030F2
DISTI # CGH55030F2-ND
WolfspeedRF MOSFET HEMT 28V 440166
RoHS: Compliant
Min Qty: 1
Container: Tray
194In Stock
  • 1:$117.3000
CGH55030F2
DISTI # 941-CGH55030F2
Cree, Inc.RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
RoHS: Compliant
69
  • 1:$114.4400
CGH55030F2
DISTI # CGH55030F2
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
38
  • 1:$121.8700
छवि भाग # विवरण
CGH55030F1

Mfr.#: CGH55030F1

OMO.#: OMO-CGH55030F1

RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
CGH55015F

Mfr.#: CGH55015F

OMO.#: OMO-CGH55015F-1190

नयाँ र मौलिक
CGH55015F 4.9-5.8G 15W

Mfr.#: CGH55015F 4.9-5.8G 15W

OMO.#: OMO-CGH55015F-4-9-5-8G-15W-1190

नयाँ र मौलिक
CGH55030F-TB

Mfr.#: CGH55030F-TB

OMO.#: OMO-CGH55030F-TB-WOLFSPEED

RF EVAL HEMT AMPLIFIER
CGH55030F2/P1

Mfr.#: CGH55030F2/P1

OMO.#: OMO-CGH55030F2-P1-1190

नयाँ र मौलिक
CGH5502264FLF

Mfr.#: CGH5502264FLF

OMO.#: OMO-CGH5502264FLF-1190

Thick Film Resistors - Through Hole
CGH5506194FLF

Mfr.#: CGH5506194FLF

OMO.#: OMO-CGH5506194FLF-1190

Thick Film Resistors - Through Hole
CGH55015F1

Mfr.#: CGH55015F1

OMO.#: OMO-CGH55015F1-WOLFSPEED

RF MOSFET HEMT 28V 440196
CGH5505116FLF

Mfr.#: CGH5505116FLF

OMO.#: OMO-CGH5505116FLF-1190

Thick Film Resistors - Through Hole
CGH5506194DLF

Mfr.#: CGH5506194DLF

OMO.#: OMO-CGH5506194DLF-1190

Thick Film Resistors - Through Hole
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
CGH55030F2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १७१.६६
US$ १७१.६६
10
US$ १६३.०८
US$ १ ६३०.७७
100
US$ १५४.४९
US$ १५ ४४९.४०
500
US$ १४५.९१
US$ ७२ ९५५.५०
1000
US$ १३७.३३
US$ १३७ ३२८.००
बाट सुरु गर्नुहोस्
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