BSO330N02KGFUMA1

Mfr. #:: BSO330N02KGFUMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET 2N-CH 20V 5.4A 8DSO
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: BSO330N02KGFUMA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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उत्पादन विशेषता
विशेषता मान

Tags: BSO330N02KG, BSO33, BSO3, BSO

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSO330N02KGFUMA1 विवरण

***et: Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin TDSON T/R

***i-Key: MOSFET 2N-CH 20V 5.4A 8DSO

***i-Key Marketplace: SMALL SIGNAL N-CHANNEL MOSFET

***ure Electronics: Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8

***ical: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R

***Yang: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***(Formerly Allied Electronics): IRF7317PBF Dual N/P-channel MOSFET Transistor; 5.3 A; 6.6 A; 20 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700

***ark: Dual N/p Channel Mosfet, 20V, Soic; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:6.6A; No. Of Pins:8Pins Rohs Compliant: Yes

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***ure Electronics: Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8

***Yang: Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel

***ineon SCT: -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***Yang: Transistor MOSFET Array Dual P-Channel 20V 5A 8-Pin SOIC N T/R - Bulk

***inecomponents.com: Dual P-Channel 2.5V Specified PowerTrench® MOSFET

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ser: MOSFETs Dl P-Ch 2.5V Spec PowerTrench

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1	Infineon Technologies AG	Trans MOSFET 2N-CH 20V 5.4A 8DSO - Bulk (Alt: BSO330N02KGFUMA1) Min Qty: 1389 Container: Bulk	Americas - 0	13890:$0.2279 6945:$0.2319 4167:$0.2399 2778:$0.2499 1389:$0.2589
BSO330N02K G DISTI # 726-BSO330N02KG	Infineon Technologies AG	MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 RoHS: Compliant	2299	1:$0.9300 10:$0.7200 100:$0.5510 500:$0.4660 1000:$0.3710 2500:$0.3070 5000:$0.2860 10000:$0.2750 25000:$0.2650
BSO330N02KGFUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	12500	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: BSO330N02K(330N2K) OMO.#: OMO-BSO330N02K-330N2K--1190	नयाँ र मौलिक
	Mfr.#: BSO330N02KG OMO.#: OMO-BSO330N02KG-1190	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSO330N02KGFUMA1 OMO.#: OMO-BSO330N02KGFUMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 5.4A 8DSO
	Mfr.#: BSO330N02K G OMO.#: OMO-BSO330N02K-G-126	IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2

उपलब्धता

स्टक:: Available
अर्डर मा:: 4000
मात्रा प्रविष्ट गर्नुहोस्:

BSO330N02KGFUMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.३४~~; ~~US$ ०.३४~~

10: ~~US$ ०.३२~~; ~~US$ ३.२५~~

100: ~~US$ ०.३१~~; ~~US$ ३०.७७~~

500: ~~US$ ०.२९~~; ~~US$ १४५.३०~~

1000: ~~US$ ०.२७~~; ~~US$ २७३.५०~~

बाट सुरु गर्नुहोस्

BSO330N02KG 3
BSO33 4
BSO3 40
BSO 258

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More Newest Products

BSO330N02KGFUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes