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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| HGTD10N50F1S | Harris Semiconductor | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA RoHS: Not Compliant | 495 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: HGTD10N40F1 OMO.#: OMO-HGTD10N40F1-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA |
|
|
Mfr.#: HGTD10N40F1S OMO.#: OMO-HGTD10N40F1S-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA |
|
|
Mfr.#: HGTD10N50F1 OMO.#: OMO-HGTD10N50F1-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA |
|
|
Mfr.#: HGTD10N50F1S OMO.#: OMO-HGTD10N50F1S-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA |