SI4362BDY-T1-E3

SI4362BDY-T1-E3
Mfr. #:
SI4362BDY-T1-E3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 30V 19.8A 6.6W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4362BDY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4362BDY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
उत्पादन कोटि
आईसी चिप्स
प्याकेजिङ
रील
अंश-उपनामहरू
SI4362BDY-E3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOIC-Narrow-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
3 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
7 ns 8 ns
उदय-समय
11 ns 10 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
19.8 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
4.6 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
41 ns 47 ns
सामान्य-टर्न-अन-डिले-समय
26 ns 12 ns
च्यानल-मोड
वृद्धि
Tags
SI4362, SI436, SI43, SI4
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 29A 8-SOIC
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4362BDY-T1-E3
DISTI # SI4362BDY-T1-E3-ND
Vishay SiliconixMOSFET N-CH 30V 29A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4362BDY-T1-E3
    DISTI # 781-SI4362BDY-E3
    Vishay IntertechnologiesMOSFET 30V 19.8A 6.6W
    RoHS: Compliant
    0
    • 1:$2.6800
    • 10:$2.2200
    • 100:$1.7200
    • 500:$1.5100
    • 1000:$1.2500
    • 2500:$1.1700
    • 5000:$1.1200
    छवि भाग # विवरण
    SI4362BDY-T1-E3

    Mfr.#: SI4362BDY-T1-E3

    OMO.#: OMO-SI4362BDY-T1-E3

    MOSFET 30V 19.8A 6.6W
    SI4362BDY-T1-GE3

    Mfr.#: SI4362BDY-T1-GE3

    OMO.#: OMO-SI4362BDY-T1-GE3

    MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    SI4362BDY-T1-E3

    Mfr.#: SI4362BDY-T1-E3

    OMO.#: OMO-SI4362BDY-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 30V 19.8A 6.6W
    SI4362BDY-T1-GE3

    Mfr.#: SI4362BDY-T1-GE3

    OMO.#: OMO-SI4362BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4000
    मात्रा प्रविष्ट गर्नुहोस्:
    SI4362BDY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.६८
    US$ १.६८
    10
    US$ १.६०
    US$ १५.९६
    100
    US$ १.५१
    US$ १५१.२०
    500
    US$ १.४३
    US$ ७१४.००
    1000
    US$ १.३४
    US$ १ ३४४.००
    बाट सुरु गर्नुहोस्
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