BDP949H6327XTSA1

Mfr. #:: BDP949H6327XTSA1
निर्माता:: Infineon Technologies
विवरण:: TRANS NPN 60V 3A SOT223
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: BDP949H6327XTSA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

Tags: BDP949H, BDP949, BDP94, BDP9, BDP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BDP949H6327XTSA1 विवरण

***Components: On a Reel of 1000, Infineon BDP949 NPN Transistor, 3 A, 60 V, 4-Pin SOT-223

***ure Electronics: BDP949 Series 60 V 3 A Surface Mount Silicon NPN Transistor - SOT-223-4

***ical: Trans GP BJT NPN 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R

***et Europe: Trans GP BJT NPN 60V 3A 4-Pin SOT-223 T/R

*** electronic: Transistor NPN 3A/60V 5W SOT223

***ronik: NPN TRANSISTOR 60V 3A 5W SOT223

***ukat: NPN 60V 3A 5W B:100-475 SOT223

***i-Key: TRANS NPN 60V 3A SOT223

***ark: Transistor, Npn, Sot-223; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:100Mhz; Power Dissipation Pd:3W; Dc Collector Current:3A; Dc Current Gain Hfe:85Hfe; No. Of Pins:3Pins Rohs Compliant: Yes

***ment14 APAC: TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:3W; DC Collector Current:3A; DC Current Gain hFE:85hFE; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:5A; SMD Marking:BDP 949; Termination Type:Surface Mount Device; Voltage Vcbo:60V

***nell: TRANSISTOR, NPN, SOT-223; Biegunowość tranzystora:NPN; Napięcie kolektor - emiter V(br)ceo:60V; Częstotliwość przejścia ft:100MHz; Straty mocy Pd:3W; Prąd kolektora DC:3A; Wzmocnienie prądu DC hFE:85hFE; Rodzaj obudowy tranzystora:SOT-223; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:AEC-Q101; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Hfe, min.:40; Liczba tranzystorów:1; Maks. ciągły prąd kolektora Ic:3A; Napięcie Vcbo:60V; Napięcie nasycenia kolektor - emiter Vce(on):500mV; Oznaczenie SMD:BDP 949; Pasmo wzmocnienia ft, typ.:100MHz; Prąd Ic hFE:500mA; Prąd Ic stały a, maks.:3A; Prąd pulsujący Icm:5A; Straty mocy Ptot, maks.:1.5W; Temperatura przy pełnej mocy znamionowej:25°C; Typ zakończenia:Do montażu powierzchniowego

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
BDP949H6327XTSA1 DISTI # V72:2272_06390978	Infineon Technologies AG	Trans GP BJT NPN 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	7	1:$0.7921
BDP949H6327XTSA1 DISTI # V36:1790_06390978	Infineon Technologies AG	Trans GP BJT NPN 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	0
BDP949H6327XTSA1 DISTI # BDP949H6327XTSA1-ND	Infineon Technologies AG	TRANS NPN 60V 3A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
BDP949H6327XTSA1 DISTI # SP000748382	Infineon Technologies AG	Trans GP BJT NPN 60V 3A 4-Pin SOT-223 T/R (Alt: SP000748382) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 7000	10000:€0.1919 6000:€0.2059 4000:€0.2239 2000:€0.2439 1000:€0.2979
BDP949H6327XTSA1 DISTI # BDP949H6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 60V 3A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BDP949H6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2489 15000:$0.2529 9000:$0.2619 6000:$0.2719 3000:$0.2819
BDP949H6327XTSA1 DISTI # BDP 949 H6327	Infineon Technologies AG	Trans GP BJT NPN 60V 3A 4-Pin SOT-223 T/R (Alt: BDP 949 H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.2335 75000:$0.2365 30000:$0.2396 15000:$0.2428 9000:$0.2493 6000:$0.2562 3000:$0.2636
BDP949H6327XTSA1 DISTI # 726-BDP949H6327XTSA1	Infineon Technologies AG	Bipolar Transistors - BJT AF TRANSISTORS RoHS: Compliant	29544	1:$0.7300 10:$0.6080 100:$0.3920 1000:$0.3140
BDP 949 H6327 DISTI # 726-BDP949H6327	Infineon Technologies AG	Bipolar Transistors - BJT AF TRANSISTOR RoHS: Compliant	0
BDP949H6327XTSA1 DISTI # BDP949	Infineon Technologies AG	NPN 60V 3A 5W B:100-475 SOT223 RoHS: Compliant	57600	100:€0.2260 500:€0.1860 1000:€0.1660 3000:€0.1600

सम्बन्धित उत्पादनहरु

छवि

भाग #

विवरण

Mfr.#: BDP949H6327

OMO.#: OMO-BDP949H6327-INFINEON-TECHNOLOGIES

नयाँ र मौलिक

Mfr.#: BDP949H6327XTSA1-CUT TAPE

OMO.#: OMO-BDP949H6327XTSA1-CUT-TAPE-1190

नयाँ र मौलिक

Mfr.#: BDP949H6327XTSA1

OMO.#: OMO-BDP949H6327XTSA1-INFINEON-TECHNOLOGIES

TRANS NPN 60V 3A SOT223

उपलब्धता

स्टक:: Available
अर्डर मा:: 3500
मात्रा प्रविष्ट गर्नुहोस्:

BDP949H6327XTSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.३१~~; ~~US$ ०.३१~~

10: ~~US$ ०.३०~~; ~~US$ २.९५~~

100: ~~US$ ०.२८~~; ~~US$ २७.९९~~

500: ~~US$ ०.२६~~; ~~US$ १३२.१५~~

1000: ~~US$ ०.२५~~; ~~US$ २४८.८०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

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BDP949H6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes