LMG3411R070RWHR

LMG3411R070RWHR
Mfr. #:
LMG3411R070RWHR
विवरण:
Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
LMG3411R070RWHR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
LMG3411R070RWHR थप जानकारी LMG3411R070RWHR Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
टेक्सास उपकरण
उत्पादन कोटि:
गेट चालकहरू
RoHS:
Y
उत्पादन:
MOSFET गेट चालकहरू
प्रकार:
उच्च पक्ष, निम्न पक्ष
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
QFN-32
चालक संख्या:
1 Driver
आउटपुट संख्या:
1 Output
उठ्ने समय:
15 ns
पतन समय:
4.2 ns
आपूर्ति भोल्टेज - न्यूनतम:
9.5 V
आपूर्ति भोल्टेज - अधिकतम:
18 V
प्रचार ढिलाइ - अधिकतम:
36 ns
सञ्चालन आपूर्ति वर्तमान:
43 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 125 C
शृङ्खला:
LMG3411R070
प्याकेजिङ:
रील
सञ्चालन तापमान दायरा:
- 40 C to + 125 C
आउटपुट भोल्टेज:
5 V
प्रविधि:
सि
ब्रान्ड:
टेक्सास उपकरण
अधिकतम टर्न-अफ ढिलाइ समय:
10 ns
अधिकतम चालू-अन ढिलाइ समय:
12 ns
नमी संवेदनशील:
हो
उत्पादन प्रकार:
गेट चालकहरू
Rds अन - ड्रेन-स्रोत प्रतिरोध:
70 mOhms
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
PMIC - पावर व्यवस्थापन ICs
Tags
LMG3411, LMG341, LMG34, LMG3, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    O***v
    O***v
    RU

    The product corresponds to the description

    2019-05-08
    K***E
    K***E
    KR

    cheap and good working.

    2019-08-06
    A***A
    A***A
    ID

    the super capacitor was very powerfull..good product..recommended seller..awesome!

    2019-06-27
***AS INSTRUMENTS INCORPORATED
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
***XS
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
LMG3410R070 600V 70mΩ GaN Power Stage
OMO Electronic LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery reducing switching losses by as much as 80% and low switch node ringing to decreasing EMI.
छवि भाग # विवरण
LMG3411R070RWHR

Mfr.#: LMG3411R070RWHR

OMO.#: OMO-LMG3411R070RWHR

Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
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Mfr.#: LMG3411EVM-029

OMO.#: OMO-LMG3411EVM-029-TEXAS-INSTRUMENTS

LMG3411EVM-029 HALF BRIDGE
LMG3411R070RWHT

Mfr.#: LMG3411R070RWHT

OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
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Mfr.#: LMG3411EVM-018

OMO.#: OMO-LMG3411EVM-018-1190

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उपलब्धता
स्टक:
Available
अर्डर मा:
1500
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