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IPW65R095C7XKSA1

IPW65R095C7XKSA1
Mfr. #:
IPW65R095C7XKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CH 650V 24A TO247
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPW65R095C7XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPW65R095C7XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Infineon टेक्नोलोजीहरू
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
ट्यूब
अंश-उपनामहरू
IPW65R095C7 SP001080128
एकाइ - वजन
1.340411 oz
माउन्टिङ-शैली
प्वाल मार्फत
ट्रेडनेम
CoolMOS
प्याकेज-केस
TO-247-3
प्रविधि
सि
कन्फिगरेसन
एकल
Pd-शक्ति-डिसिपेशन
128 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
7 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
+/- 20 V
आईडी-निरन्तर-नाली-वर्तमान
24 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
650 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
3.5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
84 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
60 ns
सामान्य-टर्न-अन-डिले-समय
14 ns
Qg-गेट-चार्ज
45 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
-
च्यानल-मोड
वृद्धि
Tags
IPW65R09, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 24 A, 700 V, 3-Pin TO-247 Infineon IPW65R095C7XKSA1
***ical
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***et Europe
Trans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube
***an P&S
700V,100A,N-channel power MOSFET
***ark
MOSFET, N-CH, 650V, 24A, TO-247-3
***i-Key
MOSFET N-CH 650V 24A TO247
***ukat
N-Ch 650V 24A 128W 0,095R TO247
***ronik
N-CH 650V 95mOhm 24A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 24A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:128W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 24A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.084ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:128W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
भाग # Mfg। विवरण स्टक मूल्य
IPW65R095C7XKSA1
DISTI # V99:2348_06377177		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube223
  • 1:$3.5023
IPW65R095C7XKSA1
DISTI # V36:1790_06377177		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$2.6380
  • 120000:$2.6430
  • 24000:$3.3570
  • 2400:$4.8390
  • 240:$5.1000
IPW65R095C7XKSA1
DISTI # IPW65R095C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 24A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		458In Stock
  • 2640:$3.1625
  • 720:$3.9472
  • 240:$4.6368
  • 25:$5.3500
  • 10:$5.6590
  • 1:$6.3000
IPW65R095C7XKSA1
DISTI # 33946866		Infineon Technologies AGTrans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube223
  • 2:$3.5023
IPW65R095C7XKSA1
DISTI # IPW65R095C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R095C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.7900
  • 1440:$2.8900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.1900
IPW65R095C7XKSA1
DISTI # SP001080128		Infineon Technologies AGTrans MOSFET N-CH 700V 33A 3-Pin TO-247 Tube (Alt: SP001080128)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.4900
  • 500:€2.5900
  • 100:€2.6900
  • 50:€2.8900
  • 25:€2.9900
  • 10:€3.0900
  • 1:€3.3900
IPW65R095C7
DISTI # 726-IPW65R095C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		363
  • 1:$5.9900
  • 10:$5.0900
  • 100:$4.4100
  • 250:$4.1900
  • 500:$3.7600
IPW65R095C7XKSA1
DISTI # 726-IPW65R095C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		220
  • 1:$5.9900
  • 10:$5.0900
  • 100:$4.4100
  • 250:$4.1900
  • 500:$3.7600
IPW65R095C7XKSA1
DISTI # IPW65R095C7XKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,24A,128W,PG-TO247-3203
  • 30:$4.7400
  • 10:$5.4500
  • 3:$6.1700
  • 1:$6.8600
IPW65R095C7XKSA1
DISTI # IPW65R095C7		Infineon Technologies AGN-Ch 650V 24A 128W 0,095R TO247
RoHS: Compliant		0
  • 1:€7.1500
  • 10:€4.1500
  • 50:€2.6500
  • 100:€2.5200
IPW65R095C7XKSA1
DISTI # 2420506		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3480
  • 500:£2.9000
  • 250:£3.2300
  • 100:£3.3900
  • 10:£3.9300
  • 1:£5.1000
IPW65R095C7XKSA1
DISTI # 2420506		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3
RoHS: Compliant		240
  • 500:$5.6700
  • 250:$6.3100
  • 100:$6.6500
  • 10:$7.6700
  • 1:$9.0300
छवि भाग # विवरण
IPW65R095C7

Mfr.#: IPW65R095C7

OMO.#: OMO-IPW65R095C7

 MOSFET HIGH POWER_NEW
IPW65R095C7XKSA1

Mfr.#: IPW65R095C7XKSA1

OMO.#: OMO-IPW65R095C7XKSA1

 MOSFET HIGH POWER_NEW
IPW65R099C6

Mfr.#: IPW65R099C6

OMO.#: OMO-IPW65R099C6

 MOSFET N-Ch 700V 38A TO247-3
IPW65R095C7

Mfr.#: IPW65R095C7

OMO.#: OMO-IPW65R095C7-1190

 - Bulk (Alt: IPW65R095C7)
IPW65R095C7XKSA1

Mfr.#: IPW65R095C7XKSA1

OMO.#: OMO-IPW65R095C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 24A TO247
IPW65R099C6

Mfr.#: IPW65R099C6

OMO.#: OMO-IPW65R099C6-1190

 Trans MOSFET N-CH 650V 38A 3-Pin TO-247 Tube (Alt: SP000896396)
IPW65R099C6,65C6099

Mfr.#: IPW65R099C6,65C6099

OMO.#: OMO-IPW65R099C6-65C6099-1190

 नयाँ र मौलिक
IPW65R099C6S

Mfr.#: IPW65R099C6S

OMO.#: OMO-IPW65R099C6S-1190

 नयाँ र मौलिक
IPW65R099C6FKSA1

Mfr.#: IPW65R099C6FKSA1

OMO.#: OMO-IPW65R099C6FKSA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 700V 38A TO247-3
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
IPW65R095C7XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.९६
US$ ३.९६
10
US$ ३.७६
US$ ३७.५९
100
US$ ३.५६
US$ ३५६.१३
500
US$ ३.३६
US$ १ ६८१.७५
1000
US$ ३.१७
US$ ३ १६५.६०
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