IRG7S313UPBF

IRG7S313UPBF
Mfr. #:
IRG7S313UPBF
निर्माता:
Infineon Technologies AG
विवरण:
IGBT,N CHANNEL,330V,40A,D2PAK, DC Collector Current:40A, Collector Emitter Saturation Voltage Vce(on):2.14V, Power Dissipation Pd:78W, Collector Emitter Voltage V(br)ceo:330V, No. of Pins:3Pins,
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRG7S313UPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
IRG7S3, IRG7S, IRG7, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 330V 40A 3-Pin(2+Tab) D2PAK
***ernational Rectifier
330V PDP Trench IGBT in a D2Pak package
***nell
IGBT,N CH,330V,40A,D2PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.14V; Power Dissipation Pd:78W; Collector Emitter Voltage V(br)ceo:330V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:78W
भाग # Mfg। विवरण स्टक मूल्य
IRG7S313UPBF
DISTI # 41T2866
Infineon Technologies AGIGBT,N CHANNEL,330V,40A,D2PAK,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.14V,Power Dissipation Pd:78W,Collector Emitter Voltage V(br)ceo:330V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
    IRG7S313UPBF
    DISTI # 70019802
    Infineon Technologies AGMOSFET,330V,40.000A,D2PAK
    RoHS: Compliant
    0
    • 350:$1.2400
    • 700:$1.1800
    • 1050:$1.1300
    IRG7S313UPBF
    DISTI # 942-IRG7S313UPBF
    Infineon Technologies AGIGBT Transistors 330V PDP TRENCH IGBT Ultrafast 8 - 30 kHz
    RoHS: Compliant
    0
      छवि भाग # विवरण
      IRG7S313UTRLPBF

      Mfr.#: IRG7S313UTRLPBF

      OMO.#: OMO-IRG7S313UTRLPBF

      MOSFET 330V 40A D2PAK
      IRG7S313UTRLPBF

      Mfr.#: IRG7S313UTRLPBF

      OMO.#: OMO-IRG7S313UTRLPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET 330V 40A D2PAK
      IRG7S313U

      Mfr.#: IRG7S313U

      OMO.#: OMO-IRG7S313U-1190

      नयाँ र मौलिक
      IRG7S313U G7S313U

      Mfr.#: IRG7S313U G7S313U

      OMO.#: OMO-IRG7S313U-G7S313U-1190

      नयाँ र मौलिक
      IRG7S313UPBF

      Mfr.#: IRG7S313UPBF

      OMO.#: OMO-IRG7S313UPBF-1190

      IGBT,N CHANNEL,330V,40A,D2PAK, DC Collector Current:40A, Collector Emitter Saturation Voltage Vce(on):2.14V, Power Dissipation Pd:78W, Collector Emitter Voltage V(br)ceo:330V, No. of Pins:3Pins,
      IRG7S313UTRL

      Mfr.#: IRG7S313UTRL

      OMO.#: OMO-IRG7S313UTRL-1190

      नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1000
      मात्रा प्रविष्ट गर्नुहोस्:
      IRG7S313UPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.७०
      US$ १.७०
      10
      US$ १.६१
      US$ १६.१०
      100
      US$ १.५३
      US$ १५२.५५
      500
      US$ १.४४
      US$ ७२०.४०
      1000
      US$ १.३६
      US$ १ ३५६.००
      बाट सुरु गर्नुहोस्
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