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AOT5B65M1

AOT5B65M1
Mfr. #:
AOT5B65M1
निर्माता:
Alpha & Omega Semiconductor Inc
विवरण:
IGBT 650V 5A TO220
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
AOT5B65M1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
AOT5, AOT
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, SINGLE, 600V, 10A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 24W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
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N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
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IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
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***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
भाग # Mfg। विवरण स्टक मूल्य
AOT5B65M1
DISTI # 785-1765-ND		Alpha & Omega SemiconductorIGBT 650V 5A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		890In Stock
  • 500:$0.8379
  • 250:$0.9482
  • 100:$1.0805
  • 25:$1.2348
  • 10:$1.3670
  • 1:$1.5400
छवि भाग # विवरण
AOT500

Mfr.#: AOT500

OMO.#: OMO-AOT500-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 33V 80A TO220
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OMO.#: OMO-AOT502-ALPHA-AND-OMEGA-SEMICONDUCTOR

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AOT5630

Mfr.#: AOT5630

OMO.#: OMO-AOT5630-1190

 नयाँ र मौलिक
AOT5B60D

Mfr.#: AOT5B60D

OMO.#: OMO-AOT5B60D-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 600V 10A 82.4W TO220
AOT5B65M1

Mfr.#: AOT5B65M1

OMO.#: OMO-AOT5B65M1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 5A TO220
AOT5N100

Mfr.#: AOT5N100

OMO.#: OMO-AOT5N100-ALPHA-AND-OMEGA-SEMICONDUCTOR

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AOT5N100 1000V 4A

Mfr.#: AOT5N100 1000V 4A

OMO.#: OMO-AOT5N100-1000V-4A-1190

 नयाँ र मौलिक
AOT5N50 T5N50

Mfr.#: AOT5N50 T5N50

OMO.#: OMO-AOT5N50-T5N50-1190

 नयाँ र मौलिक
AOT5N90

Mfr.#: AOT5N90

OMO.#: OMO-AOT5N90-1190

 नयाँ र मौलिक
AOT5N50_001

Mfr.#: AOT5N50_001

OMO.#: OMO-AOT5N50-001-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 500V 5A TO-220
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
AOT5B65M1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.२६
US$ १.२६
10
US$ १.१९
US$ ११.९४
100
US$ १.१३
US$ ११३.१२
500
US$ १.०७
US$ ५३४.१५
1000
US$ १.०१
US$ १ ००५.५०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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