RFD4N06L

RFD4N06L
Mfr. #:
RFD4N06L
निर्माता:
Rochester Electronics, LLC
विवरण:
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RFD4N06L डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
RFD4N, RFD4, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
RFD4N06LSM9A
DISTI # RFD4N06LSM9A-ND
ON SemiconductorMOSFET N-CH 60V 4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    RFD4N06LSM9A
    DISTI # 512-RFD4N06LSM9A
    ON SemiconductorMOSFET 60V Single
    RoHS: Compliant
    0
      RFD4N06LSM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant
      67132
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      RFD4N06LHarris SemiconductorPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      1424
      • 1000:$0.2800
      • 500:$0.2900
      • 100:$0.3000
      • 25:$0.3200
      • 1:$0.3400
      RFD4N06LHARTING Technology GroupPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      975
        RFD4N06LSM9AS2457Fairchild Semiconductor Corporation 
        RoHS: Compliant
        38489
          छवि भाग # विवरण
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A

          MOSFET 60V Single
          RFD40N03

          Mfr.#: RFD40N03

          OMO.#: OMO-RFD40N03-1190

          नयाँ र मौलिक
          RFD43F-NF

          Mfr.#: RFD43F-NF

          OMO.#: OMO-RFD43F-NF-1190

          नयाँ र मौलिक
          RFD4N06L

          Mfr.#: RFD4N06L

          OMO.#: OMO-RFD4N06L-1190

          Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
          RFD4N06LSM

          Mfr.#: RFD4N06LSM

          OMO.#: OMO-RFD4N06LSM-1190

          नयाँ र मौलिक
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A-ON-SEMICONDUCTOR

          MOSFET N-CH 60V 4A DPAK
          RFD4N06LSM9AS2457

          Mfr.#: RFD4N06LSM9AS2457

          OMO.#: OMO-RFD4N06LSM9AS2457-1190

          नयाँ र मौलिक
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          2500
          मात्रा प्रविष्ट गर्नुहोस्:
          RFD4N06L को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ ०.००
          US$ ०.००
          10
          US$ ०.००
          US$ ०.००
          100
          US$ ०.००
          US$ ०.००
          500
          US$ ०.००
          US$ ०.००
          1000
          US$ ०.००
          US$ ०.००
          बाट सुरु गर्नुहोस्
          नवीनतम उत्पादनहरू
          • IO-Link™ Devices
            Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
          • Large Diameter Clear Hole Spacers
            RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
          • WE-ExB Series Common Mode Power Line Choke
            Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
          • CPI2-B1-REU Production Device Programmer
            Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
          • CFSH05-20L Schottky Diode
            Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
          Top