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SI1016X-T1-GE3

SI1016X-T1-GE3
Mfr. #:
SI1016X-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N/P-CH 20V SC89-6
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI1016X-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI1016X-GE3
एकाइ - वजन
0.001129 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET
प्याकेज-केस
SOT-563, SOT-666
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
SC-89-6
कन्फिगरेसन
N- च्यानल P- च्यानल
FET-प्रकार
N र P- च्यानल
पावर-अधिकतम
250mW
ट्रान्जिस्टर-प्रकार
1 N-Channel 1 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
485mA, 370mA
Rds-on-max-Id-Vgs
700 mOhm @ 600mA, 4.5V
Vgs-th-max-Id
1V @ 250μA
गेट-चार्ज-Qg-Vgs
0.75nC @ 4.5V
Pd-शक्ति-डिसिपेशन
250 mW
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
6 V
आईडी-निरन्तर-नाली-वर्तमान
600 mA
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
20 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
410 mOhms 800 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल P- च्यानल
च्यानल-मोड
वृद्धि
Tags
SI1016X-T, SI1016X, SI1016, SI101, SI10, SI1
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6
*** Source Electronics
MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, SC-89; Tra; DUAL N/P CHANNEL MOSFET, 20V, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:485mA; Continuous Drain Current Id, P Channel:-370mA; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, N & P CH, 20V, 0.485A, SOT-563; Transistor Polarity:N and P Channel; Continuous Drain Current Id:485mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:380mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C
भाग # Mfg। विवरण स्टक मूल्य
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V SC89-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		38255In Stock
  • 1000:$0.1926
  • 500:$0.2493
  • 100:$0.3399
  • 10:$0.4530
  • 1:$0.5400
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V SC89-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		38255In Stock
  • 1000:$0.1926
  • 500:$0.2493
  • 100:$0.3399
  • 10:$0.4530
  • 1:$0.5400
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V SC89-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		33000In Stock
  • 3000:$0.1705
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Cut TR (SOS) (Alt: SI1016X-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2999
  • 1:$0.4649
  • 30:$0.4389
  • 75:$0.3659
  • 150:$0.3289
  • 375:$0.2709
  • 750:$0.2049
  • 1500:$0.1859
SI1016X-T1-GE3
DISTI # SI1016X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: SI1016X-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1449
  • 6000:$0.1409
  • 12000:$0.1349
  • 18000:$0.1309
  • 30000:$0.1279
SI1016X-T1-GE3Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel
RoHS: Compliant
Container: Reel		Americas - 0
    SI1016X-T1-GE3
    DISTI # 73W9405    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: 73W9405)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 1:$0.1500
    • 6000:$0.1450
    • 12000:$0.1360
    • 18000:$0.1330
    • 30000:$0.1290
    SI1016X-T1-GE3
    DISTI # 73W9405    		Vishay IntertechnologiesMOSFET, N AND P CHANNEL, 20V, 0.41OHM, 485mA, SOT-563, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes9000
    • 1:$0.1550
    • 3000:$0.1500
    • 6000:$0.1450
    • 12000:$0.1360
    • 18000:$0.1330
    • 30000:$0.1290
    SI1016X-T1-GE3
    DISTI # 16P3672    		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, SC-89,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 1:$0.4800
    • 25:$0.3620
    • 50:$0.3160
    • 100:$0.2690
    • 250:$0.2450
    • 500:$0.2210
    • 1000:$0.1710
    SI1016X-T1-GE3.
    DISTI # 16AC0247    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V,Power Dissipation Pd:250mW,No. of Pins:6PinsRoHS Compliant: No0
    • 1:$0.1580
    • 3000:$0.1530
    • 6000:$0.1450
    • 12000:$0.1360
    • 18000:$0.1330
    • 30000:$0.1290
    SI1016X-T1-GE3
    DISTI # 70459639    		Vishay SiliconixN/P-Ch MOSFET 700/1200 mohms@4.5V
    RoHS: Compliant    		0
    • 3000:$0.5370
    • 6000:$0.3660
    SI1016X-T1-GE3
    DISTI # 781-SI1016X-T1-GE3    		Vishay IntertechnologiesMOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V
    RoHS: Compliant    		24855
    • 1:$0.4800
    • 10:$0.3620
    • 100:$0.2690
    • 500:$0.2210
    • 1000:$0.1710
    • 3000:$0.1550
    • 6000:$0.1450
    • 9000:$0.1360
    • 24000:$0.1290
    SI1016X-T1-GE3Vishay Siliconix485MA, 20V, 2 CHANNEL,N AND P-CHANNEL, SI, SMALL SIGNAL, MOSFET80
    • 38:$0.2025
    • 15:$0.2700
    • 1:$0.3600
    SI1016X-T1-GE3
    DISTI # XSFP00000119259    		Vishay SiliconixZener Diode, 8.2V V(Z), 5%, 0.5W,Silicon,Unidirectional
    RoHS: Compliant    		18000
    • 3000:$0.4000
    • 18000:$0.3636
    SI1016X-T1-GE3Vishay IntertechnologiesMOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V
    RoHS: Compliant    		Americas - 6000
      छवि भाग # विवरण
      SI1016X-T1-GE3

      Mfr.#: SI1016X-T1-GE3

      OMO.#: OMO-SI1016X-T1-GE3

      		 MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V
      SI1016X-T1-E3

      Mfr.#: SI1016X-T1-E3

      OMO.#: OMO-SI1016X-T1-E3

      		 MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3
      SI1016X

      Mfr.#: SI1016X

      OMO.#: OMO-SI1016X-1190

      		 नयाँ र मौलिक
      SI1016X-T1

      Mfr.#: SI1016X-T1

      OMO.#: OMO-SI1016X-T1-1190

      		 MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3
      SI1016X-T1-E3

      Mfr.#: SI1016X-T1-E3

      OMO.#: OMO-SI1016X-T1-E3-VISHAY

      		 MOSFET N/P-CH 20V SOT563F
      SI1016X-T1-GE3

      Mfr.#: SI1016X-T1-GE3

      OMO.#: OMO-SI1016X-T1-GE3-VISHAY

      		 MOSFET N/P-CH 20V SC89-6
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI1016X-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.१९
      US$ ०.१९
      10
      US$ ०.१८
      US$ १.८२
      100
      US$ ०.१७
      US$ १७.२७
      500
      US$ ०.१६
      US$ ८१.५५
      1000
      US$ ०.१५
      US$ १५३.५०
      बाट सुरु गर्नुहोस्
      Top