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SKM200GAR125D

SKM200GAR125D
Mfr. #:
SKM200GAR125D
निर्माता:
SEMIKRON
विवरण:
SEMITRANS, 1200V, 200A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SKM200GAR125D डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
सेमिक्रोन
उत्पादन कोटि
मोड्युल
Tags
SKM200GAR12, SKM200GAR1, SKM200GAR, SKM200GA, SKM200G, SKM200, SKM20, SKM2, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,200A I(C)
***et Europe
Trans IGBT Module N-CH 1.2KV 200A 7-Pin Case D-58
***ikron
Features: N channel , homogeneous Si Low inductance case Short tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (13 mm) and creepage distance (20 mm) Typical Applications: Switched mode power supplies at f sw > 20 kHz Resonant inverters up to 100 kHz Inductive heating Electronic welders at f sw > 20 kHz
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 400A 2400000mW Automotive 4-Pin 62MM-2 Tray
***nell
IGBT, MODULE, N-CH, 1.2KV, 400A; Transistor Polarity: N Channel; DC Collector Current: 400A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transis
***ark
IGBT MOD, N-CH, 1.2KV, 400A, 2.4KW; Continuous Collector Current:400A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:2.4kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
*** Stop Electro
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SKM200GAR125D
DISTI # 71043269		SEMIKRONSEMITRANS,1200V,200A
RoHS: Compliant		0
  • 1:$179.3000
  • 12:$170.0200
  • 48:$159.0600
  • 96:$149.4100
  • 144:$140.8700
छवि भाग # विवरण
SKM200GAH123DKL11

Mfr.#: SKM200GAH123DKL11

OMO.#: OMO-SKM200GAH123DKL11-1190

 नयाँ र मौलिक
SKM200GAH126DKL

Mfr.#: SKM200GAH126DKL

OMO.#: OMO-SKM200GAH126DKL-1190

 नयाँ र मौलिक
SKM200GAL123DKL

Mfr.#: SKM200GAL123DKL

OMO.#: OMO-SKM200GAL123DKL-1190

 नयाँ र मौलिक
SKM200GAL125D

Mfr.#: SKM200GAL125D

OMO.#: OMO-SKM200GAL125D-1190

 SEMITRANS, 1200V, 200A
SKM200GAL173D

Mfr.#: SKM200GAL173D

OMO.#: OMO-SKM200GAL173D-1190

 POWER IGBT TRANSISTOR
SKM200GAR125D

Mfr.#: SKM200GAR125D

OMO.#: OMO-SKM200GAR125D-1190

 SEMITRANS, 1200V, 200A
SKM200GB124DE

Mfr.#: SKM200GB124DE

OMO.#: OMO-SKM200GB124DE-1190

 नयाँ र मौलिक
SKM200GB126D

Mfr.#: SKM200GB126D

OMO.#: OMO-SKM200GB126D-1190

 SEMITRANS, 1200V, 200A
SKM200GB128DE

Mfr.#: SKM200GB128DE

OMO.#: OMO-SKM200GB128DE-1190

 नयाँ र मौलिक
SKM200GB12V

Mfr.#: SKM200GB12V

OMO.#: OMO-SKM200GB12V-1190

 IGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
SKM200GAR125D को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २११.३०
US$ २११.३०
10
US$ २००.७४
US$ २ ००७.४०
100
US$ १९०.१७
US$ १९ ०१७.४५
500
US$ १७९.६१
US$ ८९ ८०४.६५
1000
US$ १६९.०४
US$ १६९ ०४४.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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