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SIJ458DP-T1-GE3

SIJ458DP-T1-GE3
Mfr. #:
SIJ458DP-T1-GE3
निर्माता:
Vishay
विवरण:
RF Bipolar Transistors MOSFET 30V 60A 69.4W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIJ458DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
ट्रेडनेम
TrenchFET
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
ट्रान्जिस्टर-प्रकार
1 N-Channel
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
SIJ45, SIJ4, SIJ
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 35.5A 5-Pin(4+Tab) PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 60A PPAK SO-8
***
N-CHANNEL 30-V (D-S)
***ment14 APAC
MOSFET,N CH,DIODE,30V,60A,PPAKSO8L; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1800µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:35.5A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
भाग # Mfg। विवरण स्टक मूल्य
SIJ458DP-T1-GE3
DISTI # SIJ458DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$0.9430
SIJ458DP-T1-GE3
DISTI # SIJ458DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SIJ458DP-T1-GE3
    DISTI # SIJ458DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SIJ458DP-T1-GE3
      DISTI # 78-SIJ458DP-T1-GE3      		Vishay IntertechnologiesMOSFET 30V 60A 69.4W
      RoHS: Compliant      		0
      • 1:$1.9800
      • 10:$1.6400
      • 100:$1.2700
      • 500:$1.1200
      • 1000:$1.0700
      • 3000:$1.0600
      SIJ458DP-T1-GE3
      DISTI # 1858990      		Vishay IntertechnologiesMOSFET,N CH,DIODE,30V,60A,PPAKSO8L
      RoHS: Compliant      		776
      • 1:£0.6180
      • 10:£0.6170
      • 100:£0.6160
      • 250:£0.6150
      • 500:£0.6140
      SIJ458DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 60A 69.4W
      RoHS: Compliant      		Americas -
        छवि भाग # विवरण
        SIJ458DP-T1-GE3

        Mfr.#: SIJ458DP-T1-GE3

        OMO.#: OMO-SIJ458DP-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 30V 60A 69.4W
        SIJ458DP-T1

        Mfr.#: SIJ458DP-T1

        OMO.#: OMO-SIJ458DP-T1-1190

        		 नयाँ र मौलिक
        SIJ458DP-T1-E3

        Mfr.#: SIJ458DP-T1-E3

        OMO.#: OMO-SIJ458DP-T1-E3-1190

        		 नयाँ र मौलिक
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        1500
        मात्रा प्रविष्ट गर्नुहोस्:
        SIJ458DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ १.४१
        US$ १.४१
        10
        US$ १.३४
        US$ १३.४४
        100
        US$ १.२७
        US$ १२७.३०
        500
        US$ १.२०
        US$ ६०१.१५
        1000
        US$ १.१३
        US$ १ १३१.६०
        2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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