A3I35D025WNR1

A3I35D025WNR1
Mfr. #:
A3I35D025WNR1
निर्माता:
NXP Semiconductors
विवरण:
RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
A3I35D025WNR1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
A3I35D025WNR1 थप जानकारी A3I35D025WNR1 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
NXP
उत्पादन कोटि:
आरएफ एम्पलीफायर
RoHS:
Y
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-270WB-17
प्रकार:
वाइडब्यान्ड
सञ्चालन आवृत्ति:
3200 MHz to 4000 MHz
पाउनु:
28.9 dB
सञ्चालन आपूर्ति भोल्टेज:
28 V
परीक्षण आवृत्ति:
3800 MHz
सञ्चालन आपूर्ति वर्तमान:
260 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
A3I35D025
प्याकेजिङ:
रील
ब्रान्ड:
NXP अर्धचालक
च्यानलहरूको संख्या:
2 Channel
नमी संवेदनशील:
हो
उत्पादन प्रकार:
आरएफ एम्पलीफायर
कारखाना प्याक मात्रा:
500
उपश्रेणी:
वायरलेस र आरएफ एकीकृत सर्किट
भाग # उपनाम:
935373852528
Tags
A3I35D02, A3I3, A3I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF High-Power Wideband Drivers
NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
भाग # Mfg। विवरण स्टक मूल्य
A3I35D025WNR1
DISTI # V36:1790_21814491
NXP SemiconductorsAirfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V0
  • 500000:$27.4800
  • 250000:$27.4900
  • 50000:$32.4300
  • 5000:$45.8600
  • 500:$48.4400
A3I35D025WNR1
DISTI # A3I35D025WNR1
Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Europe - 0
  • 5000:€26.8900
  • 3000:€28.8900
  • 2000:€31.0900
  • 1000:€32.2900
  • 500:€33.6900
A3I35D025WNR1
DISTI # A3I35D025WNR1
Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$28.7900
  • 3000:$29.3900
  • 2000:$30.4900
  • 1000:$31.6900
  • 500:$32.9900
A3I35D025WNR1
DISTI # 65AC3711
NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER, 3200-4000 MHZ, 3.4 W AVG., 28 V TR0
  • 250:$29.4800
  • 100:$30.3800
  • 50:$31.0600
  • 25:$33.3300
  • 10:$35.3700
  • 5:$37.6400
  • 1:$39.6800
A3I35D025WNR1
DISTI # 771-A3I35D025WNR1
NXP SemiconductorsRF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
RoHS: Compliant
490
  • 1:$48.4400
  • 5:$45.8300
  • 10:$45.1700
  • 25:$41.9000
  • 50:$40.5500
  • 100:$39.2800
  • 250:$34.0100
  • 500:$33.1700
A3I35D025WNR1
DISTI # A3I35D025WNR1
NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 500:$38.5400
छवि भाग # विवरण
MIC94060YC6-TR

Mfr.#: MIC94060YC6-TR

OMO.#: OMO-MIC94060YC6-TR

Power Switch ICs - Power Distribution Loadswitch w/level-shift
MIC94060YC6-TR

Mfr.#: MIC94060YC6-TR

OMO.#: OMO-MIC94060YC6-TR-MICROCHIP-TECHNOLOGY

Power Switch ICs - Power Distribution
उपलब्धता
स्टक:
490
अर्डर मा:
2473
मात्रा प्रविष्ट गर्नुहोस्:
A3I35D025WNR1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४८.४४
US$ ४८.४४
5
US$ ४५.८३
US$ २२९.१५
10
US$ ४५.१७
US$ ४५१.७०
25
US$ ४१.९०
US$ १ ०४७.५०
50
US$ ४०.५५
US$ २ ०२७.५०
100
US$ ३९.२८
US$ ३ ९२८.००
250
US$ ३४.०१
US$ ८ ५०२.५०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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