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SIR770DP-T1-GE3

SIR770DP-T1-GE3
Mfr. #:
SIR770DP-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET 2N-CH 30V 8A PPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIR770DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIR770DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
टेप र रिल (TR)
अंश-उपनामहरू
SIR770DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAKR SO-8 Dual
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR SO-8 Dual
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 N-Channel (Dual)
पावर-अधिकतम
17.8W
ट्रान्जिस्टर-प्रकार
2 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
900pF @ 15V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
8A
Rds-on-max-Id-Vgs
21 mOhm @ 8A, 10V
Vgs-th-max-Id
2.8V @ 250μA
गेट-चार्ज-Qg-Vgs
21nC @ 10V
Pd-शक्ति-डिसिपेशन
17.8 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
+/- 20 V
आईडी-निरन्तर-नाली-वर्तमान
8 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
1.2 V to 2.8 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
17.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
14 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
31 S
Tags
SIR770D, SIR770, SIR77, SIR7, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8
***et
Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET,NN CH,SC DIO,30V,8A,PPAKS08; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):17500µohm; Power Dissipation Pd:3.6W
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.5236
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R (Alt: SIR770DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€1.0309
  • 10:€0.7389
  • 25:€0.5999
  • 50:€0.5299
  • 100:€0.5219
  • 500:€0.5139
  • 1000:€0.5069
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4939
  • 6000:$0.4799
  • 12000:$0.4599
  • 18000:$0.4469
  • 30000:$0.4349
SIR770DP-T1-GE3
DISTI # 781-SIR770DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5670
SIR770DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		Americas -
    छवि भाग # विवरण
    SIR770DP-T1-GE3

    Mfr.#: SIR770DP-T1-GE3

    OMO.#: OMO-SIR770DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
    SIR770DP

    Mfr.#: SIR770DP

    OMO.#: OMO-SIR770DP-1190

    		 नयाँ र मौलिक
    SIR770DP-T1-E3

    Mfr.#: SIR770DP-T1-E3

    OMO.#: OMO-SIR770DP-T1-E3-1190

    		 नयाँ र मौलिक
    SIR770DP-T1-GE3

    Mfr.#: SIR770DP-T1-GE3

    OMO.#: OMO-SIR770DP-T1-GE3-VISHAY

    		 MOSFET 2N-CH 30V 8A PPAK SO-8
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    2000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIR770DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.६५
    US$ ०.६५
    10
    US$ ०.६२
    US$ ६.२०
    100
    US$ ०.५९
    US$ ५८.७१
    500
    US$ ०.५५
    US$ २७७.२५
    1000
    US$ ०.५२
    US$ ५२१.९०
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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