SI7686DP-T1-GE3

SI7686DP-T1-GE3
Mfr. #:
SI7686DP-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V 35A PPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7686DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI7686DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SO-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
5 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
8 ns
उदय-समय
20 ns 16 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
17.9 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
9.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
20 ns 23 ns
सामान्य-टर्न-अन-डिले-समय
20 ns 13 ns
च्यानल-मोड
वृद्धि
Tags
SI7686DP-T1, SI7686DP-T, SI7686DP, SI7686D, SI7686, SI768, SI76, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R
***C
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO
***nell
N CHANNEL MOSFET, 30V, 35A, SOIC
***i-Key
MOSFET N-CH 30V 35A PPAK SO-8
***ark
MOSFET TRANSISTOR; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 35A, SOIC; Transi; N CHANNEL MOSFET, 30V, 35A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; No. of Pins:8
भाग # Mfg। विवरण स्टक मूल्य
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2983In Stock
  • 1000:$0.8378
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2983In Stock
  • 1000:$0.8378
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.7573
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7686DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.6579
  • 6000:$0.6379
  • 12000:$0.6119
  • 18000:$0.5949
  • 30000:$0.5789
SI7686DP-T1-GE3
DISTI # 26R1934
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5900
  • 25:$1.3100
  • 50:$1.1600
  • 100:$1.0000
  • 250:$0.9300
  • 500:$0.8600
  • 1000:$0.6790
SI7686DP-T1-GE3
DISTI # 33P5422
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.7550
  • 3000:$0.7500
  • 6000:$0.7140
  • 12000:$0.6330
SI7686DP-T1-GE3
DISTI # 781-SI7686DP-T1-GE3
Vishay IntertechnologiesMOSFET 30V 35A 37.9W 9.5mohm @ 10V
RoHS: Compliant
5985
  • 1:$1.5900
  • 10:$1.3100
  • 100:$1.0000
  • 500:$0.8600
  • 1000:$0.6790
  • 3000:$0.6340
  • 6000:$0.6020
  • 9000:$0.5790
SI7686DP-T1-GE3
DISTI # 1871384
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC
RoHS: Compliant
0
  • 3000:£0.6010
SI7686DP-T1-GE3
DISTI # 1871384
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC
RoHS: Compliant
0
  • 1:$2.5200
  • 10:$2.0700
  • 100:$1.5900
  • 500:$1.3700
  • 1000:$1.0800
  • 3000:$1.0100
  • 6000:$0.9530
  • 9000:$0.9390
छवि भाग # विवरण
SI7686DP-T1-E3

Mfr.#: SI7686DP-T1-E3

OMO.#: OMO-SI7686DP-T1-E3

MOSFET 30V 35A 37.9W 9.5mohm @ 10V
SI7686DP-T1-E3-CUT TAPE

Mfr.#: SI7686DP-T1-E3-CUT TAPE

OMO.#: OMO-SI7686DP-T1-E3-CUT-TAPE-1190

नयाँ र मौलिक
SI7686DN

Mfr.#: SI7686DN

OMO.#: OMO-SI7686DN-1190

नयाँ र मौलिक
SI7686DP

Mfr.#: SI7686DP

OMO.#: OMO-SI7686DP-1190

नयाँ र मौलिक
SI7686DP-T1

Mfr.#: SI7686DP-T1

OMO.#: OMO-SI7686DP-T1-1190

नयाँ र मौलिक
SI7686DP-T1-E3

Mfr.#: SI7686DP-T1-E3

OMO.#: OMO-SI7686DP-T1-E3-VISHAY

MOSFET N-CH 30V 35A PPAK SO-8
SI7686DP-T1-GE3

Mfr.#: SI7686DP-T1-GE3

OMO.#: OMO-SI7686DP-T1-GE3-VISHAY

MOSFET N-CH 30V 35A PPAK SO-8
SI7686DP-T1-GP

Mfr.#: SI7686DP-T1-GP

OMO.#: OMO-SI7686DP-T1-GP-1190

नयाँ र मौलिक
SI7686DP-TI

Mfr.#: SI7686DP-TI

OMO.#: OMO-SI7686DP-TI-1190

नयाँ र मौलिक
SI7686DP-TI-E3

Mfr.#: SI7686DP-TI-E3

OMO.#: OMO-SI7686DP-TI-E3-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
SI7686DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८७
US$ ०.८७
10
US$ ०.८२
US$ ८.२५
100
US$ ०.७८
US$ ७८.१५
500
US$ ०.७४
US$ ३६९.०५
1000
US$ ०.६९
US$ ६९४.७०
बाट सुरु गर्नुहोस्
Top