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SI7652DP-T1-GE3

SI7652DP-T1-GE3
Mfr. #:
SI7652DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
RF Bipolar Transistors MOSFET 30V 15A 3.9W 15.8mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7652DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay / Siliconix
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI7652DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SO-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
3.9 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
14 ns
उदय-समय
12 ns
Vgs-गेट-स्रोत-भोल्टेज
25 V
आईडी-निरन्तर-नाली-वर्तमान
15 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
18.5 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
32 ns
सामान्य-टर्न-अन-डिले-समय
7 ns
च्यानल-मोड
वृद्धि
Tags
SI7652, SI765, SI76, SI7
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
N CHANNEL MOSFET, 30V, 15A, SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.030ohm; Rds(on) Test Voltage, Vgs:25V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:3.9W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI7652DP-T1-GE3
DISTI # 781-SI7652DP-GE3		Vishay IntertechnologiesMOSFET 30V 15A 3.9W 15.8mohm @ 10V
RoHS: Compliant		0
  • 3000:$0.4480
  • 6000:$0.4260
  • 9000:$0.4100
SI7652DP-T1-GE3
DISTI # 2478974		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 15A, SOIC
RoHS: Compliant		0
  • 3000:£1.0960
SI7652DP-T1-GE3
DISTI # 2478974		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 15A, SOIC
RoHS: Compliant		0
  • 3000:$1.7600
छवि भाग # विवरण
SI7652DP-T1-GE3

Mfr.#: SI7652DP-T1-GE3

OMO.#: OMO-SI7652DP-T1-GE3

 MOSFET 30V 15A 3.9W 15.8mohm @ 10V
SI7652DP-T1-GE3

Mfr.#: SI7652DP-T1-GE3

OMO.#: OMO-SI7652DP-T1-GE3-317

 RF Bipolar Transistors MOSFET 30V 15A 3.9W 15.8mohm @ 10V
SI7652DP-T1-E3

Mfr.#: SI7652DP-T1-E3

OMO.#: OMO-SI7652DP-T1-E3-317

 RF Bipolar Transistors MOSFET 30V 15A 3.9W
उपलब्धता
स्टक:
Available
अर्डर मा:
4000
मात्रा प्रविष्ट गर्नुहोस्:
SI7652DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.६२
US$ ०.६२
10
US$ ०.५८
US$ ५.८४
100
US$ ०.५५
US$ ५५.३५
500
US$ ०.५२
US$ २६१.४०
1000
US$ ०.४९
US$ ४९२.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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