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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SIR402DP-T1-E3 DISTI # 40P0791 | Vishay Intertechnologies | MOSFET, N, SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.15V,Power Dissipation Pd:4.2W RoHS Compliant: Yes | 150 |
|
| SIR402DP-T1-E3 DISTI # 1684086 | Vishay Intertechnologies | MOSFET, N, SO-8 | 2256 |
|
| SIR402DP-T1-E3 DISTI # 1684086 | Vishay Intertechnologies | MOSFET, N, SO-8 RoHS: Compliant | 150 |
|
| SIR402DP-T1-E3 DISTI # 1684086RL | Vishay Intertechnologies | MOSFET, N, SO-8 RoHS: Compliant | 0 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SIR402DP-T1-GE3 OMO.#: OMO-SIR402DP-T1-GE3 |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
|
Mfr.#: SIR402DP OMO.#: OMO-SIR402DP-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SIR402DP-T1-E3 OMO.#: OMO-SIR402DP-T1-E3-1190 |
MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs |
|
Mfr.#: SIR402DP-T1-GE3 OMO.#: OMO-SIR402DP-T1-GE3-VISHAY |
MOSFET N-CH 30V 35A PPAK SO-8 |
|
|
Mfr.#: SIR402DP-TI-GE3 OMO.#: OMO-SIR402DP-TI-GE3-1190 |
नयाँ र मौलिक |