SPB02N60S5

Mfr. #:: SPB02N60S5
निर्माता:: Rochester Electronics, LLC
विवरण:: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SPB02N60S5 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: INF

उत्पादन कोटि: FETs - एकल

Tags: SPB02N60S, SPB02N60, SPB02N, SPB02, SPB0, SPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPB02N60S5 विवरण

***ponent Stockers USA: 1.8 A 600 V 3 ohm N-CHANNEL Si POWER MOSFET TO-263AB

***i-Key: MOSFET N-CH 600V 1.8A TO-263

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***p One Stop: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

***ment14 APAC: MOSFET, N, 600V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3ohm; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Transistor Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:25W; Pulse Current Idm:5.4A; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Rds on Measurement:10V

***et: Trans MOSFET N-CH 650V 1.8A 3-Pin TO-263 T/R

***i-Key Marketplace: MOSFET N-CH 650V 1.8A TO263-3

*** Electronics: N-CHANNEL POWER MOSFET

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	178In Stock	100:$0.8994 10:$1.1380 1:$1.2800
SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	178In Stock	100:$0.8994 10:$1.1380 1:$1.2800
SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
SPB02N60S5	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	700	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
SPB02N60S5 DISTI # 726-SPB02N60S5	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5 RoHS: Compliant	0

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SPB02N60C3 OMO.#: OMO-SPB02N60C3-126	IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3
	Mfr.#: SPB021N04N OMO.#: OMO-SPB021N04N-1190	नयाँ र मौलिक
	Mfr.#: SPB02N60C3ATMA1 OMO.#: OMO-SPB02N60C3ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 1.8A D2PAK
	Mfr.#: SPB02N60S5 OMO.#: OMO-SPB02N60S5-1190	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: SPB02N60S5ATMA1 OMO.#: OMO-SPB02N60S5ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 1.8A TO-263
	Mfr.#: SPB02N60S5E3045A OMO.#: OMO-SPB02N60S5E3045A-1190	नयाँ र मौलिक
	Mfr.#: SPB02N6OC3 OMO.#: OMO-SPB02N6OC3-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 1000
मात्रा प्रविष्ट गर्नुहोस्:

SPB02N60S5 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.४९~~; ~~US$ ०.४९~~

10: ~~US$ ०.४७~~; ~~US$ ४.७०~~

100: ~~US$ ०.४५~~; ~~US$ ४४.५४~~

500: ~~US$ ०.४२~~; ~~US$ २१०.३०~~

1000: ~~US$ ०.४०~~; ~~US$ ३९५.९०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SPB02N60S 3
SPB02N60 5
SPB02N 6
SPB02 7
SPB0 72
SPB 498

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SPB02N60S5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes