We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 7579In Stock |
|
| IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 7579In Stock |
|
| IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 5000In Stock |
|
| IPB025N08N3 G DISTI # IPB025N08N3 G | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) RoHS: Compliant Min Qty: 148 Container: Bulk | Americas - 0 |
|
| IPB025N08N3GXT DISTI # IPB025N08N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB025N08N3GATMA1 DISTI # SP000311980 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB025N08N3GATMA1 DISTI # 60R2648 | Infineon Technologies AG | MOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 0 |
|
| IPB025N08N3 G DISTI # 726-IPB025N08N3G | Infineon Technologies AG | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1000 |
|
| IPB025N08N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 20 |
|
| IPB025N08N3 G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2700 |
|
| IPB025N08N3GATMA1 DISTI # 8986898P | Infineon Technologies AG | MOSFET N-CHANNEL 80V 120A TO263-3, RL | 198 |
|
| IPB025N08N3GATMA1 DISTI # 1775525 | Infineon Technologies AG | MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant | 298 |
|
| IPB025N08N3GATMA1 DISTI # 1775525 | Infineon Technologies AG | MOSFET, N CH, 120A, 80V, PG-TO263-3 | 1398 |
|
| IPB025N08N3 G DISTI # C1S322000304923 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 RoHS: Compliant | 1000 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: PB025-02880 OMO.#: OMO-PB025-02880-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: PB025N08N3G OMO.#: OMO-PB025N08N3G-1190 |
नयाँ र मौलिक |