1MBI1600U4C-120

1MBI1600U4C-120
Mfr. #:
1MBI1600U4C-120
निर्माता:
Fuji Electric Co Ltd
विवरण:
IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 1.6KA, Transistor Polarity:Dual N Channel, DC Collector Current:1.6kA, Collector Emitter Saturation Voltage Vce(on):2.11V, Power Dissipation Pd:9.61kW, Collec
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
1MBI1600U4C-120 डाटा पाना
डेलिभरी:
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भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
1MBI1600, 1MBI16, 1MBI1, 1MBI, 1MB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT, MODULE, SINGLE, 1600A/1200V; Transistor Polarity:Dual N Channel; DC Collec
***ical
Trans IGBT Module 1200V 1.6KA 9610000mW 7-Pin
***Components
IGBT Module 1600A 1200V Cu 140x130mm
***ment14 APAC
IGBT, MODULE, SINGLE, 1600A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.6kA; Collector Emitter Voltage Vces:2.11V; Power Dissipation Pd:9.61kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; MSL:-
भाग # Mfg। विवरण स्टक मूल्य
1MBI1600U4C-120
DISTI # 54W0199
Fuji Electric Co LtdIGBT, MODULE, DUAL N CHANNEL, 1.2KV, 1.6KA,Transistor Polarity:Dual N Channel,DC Collector Current:1.6kA,Collector Emitter Saturation Voltage Vce(on):2.11V,Power Dissipation Pd:9.61kW,Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: No0
    1SD536F2-1MBI1600U4C-120
    DISTI # 869-1SD536F21MBI1600
    Power IntegrationsPower Management Modules 1SD536F2 PI Gate Driver ONLY
    RoHS: Not compliant
    0
      1SD536F2-1MBI1600U4C-120_Opt1
      DISTI # 869-1MBI1600U4C120
      Power IntegrationsPower Management Modules 1SD536F2 PI Gate Driver ONLY
      RoHS: Not compliant
      0
        1MBI1600U4C-120
        DISTI # FE0000000000001
        Fuji Electric Co LtdInsulated GateBipolarTransistor,1600AI(C),1200VV(BR)CES,N-Channel
        RoHS: Compliant
        5 in Stock0 on Order
        • 1:$1,187.1400
        1MBI1600U4C-120-E
        DISTI # FE0000000001838
        Fuji Electric Co LtdInsulated GateBipolarTransistor,1600AI(C),1200VV(BR)CES,N-Channel
        RoHS: Compliant
        0 in Stock0 on Order
        • 1:$1,187.1400
        1SD536F2-1MBI1600U4C-120
        DISTI # 1SD536F2-1MB-12
        Power IntegrationsPLUG-AND-PLAY IGBT DRIVER
        RoHS: Compliant
        0
        • 4:$372.2000
        • 10:$360.7400
        • 40:$333.8300
        छवि भाग # विवरण
        1MBI160-100

        Mfr.#: 1MBI160-100

        OMO.#: OMO-1MBI160-100-1190

        नयाँ र मौलिक
        1MBI1600U4C-120

        Mfr.#: 1MBI1600U4C-120

        OMO.#: OMO-1MBI1600U4C-120-1190

        IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 1.6KA, Transistor Polarity:Dual N Channel, DC Collector Current:1.6kA, Collector Emitter Saturation Voltage Vce(on):2.11V, Power Dissipation Pd:9.61kW, Collec
        1MBI1600U4C-170

        Mfr.#: 1MBI1600U4C-170

        OMO.#: OMO-1MBI1600U4C-170-1190

        IGBT, MODULE, SINGLE, 1600A/1700V
        1MBI1600VC-170E

        Mfr.#: 1MBI1600VC-170E

        OMO.#: OMO-1MBI1600VC-170E-1190

        नयाँ र मौलिक
        1MBI160D-100SC

        Mfr.#: 1MBI160D-100SC

        OMO.#: OMO-1MBI160D-100SC-1190

        नयाँ र मौलिक
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        5000
        मात्रा प्रविष्ट गर्नुहोस्:
        1MBI1600U4C-120 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ १.००
        US$ १.००
        10
        US$ ९६४.७१
        US$ ९ ६४७.११
        100
        US$ ९१३.९४
        US$ ९१ ३९३.६५
        500
        US$ ८६३.१६
        US$ ४३१ ५८१.१५
        1000
        US$ ८१२.३९
        US$ ८१२ ३८८.००
        बाट सुरु गर्नुहोस्
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