We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| BUZ111S | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, N-Channel, MOSFET RoHS: Not Compliant | 2584 |
|
| BUZ111SL-E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, N-Channel, MOSFET RoHS: Not Compliant | 2000 |
|
| BUZ111SLE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, N-Channel, MOSFET RoHS: Not Compliant | 2000 |
|
| BUZ111SL | Siemens | MOSFET Transistor, N-Channel, TO-220AB | 90 | |
| BUZ111S | Infineon Technologies AG | 8800 | ||
| BUZ111 | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1249 | |
| BUZ111S | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 4 | |
| BUZ111SE3045 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | Europe - 2000 | |
| BUZ111SE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | Europe - 215 | |
| BUZ111S | Infineon Technologies AG | INSTOCK | 358 |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: BUZ111SLE3045A OMO.#: OMO-BUZ111SLE3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: BUZ110SL OMO.#: OMO-BUZ110SL-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: BUZ110SLE3045A OMO.#: OMO-BUZ110SLE3045A-1190 |
80 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
|
|
Mfr.#: BUZ111 OMO.#: OMO-BUZ111-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: BUZ111S OMO.#: OMO-BUZ111S-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: BUZ111SL-E3045A OMO.#: OMO-BUZ111SL-E3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: BUZ11FI OMO.#: OMO-BUZ11FI-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: BUZ11R4676 OMO.#: OMO-BUZ11R4676-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: BUZ11S2FI OMO.#: OMO-BUZ11S2FI-1190 |
नयाँ र मौलिक |
|
Mfr.#: BUZ11_R4941 |
MOSFET N-CH 50V 30A TO-220AB |